MAC997B8 ON Semiconductor, MAC997B8 Datasheet - Page 2

• Manufacturer Part Number: MAC997B8
• Description: Triacs THY .8A 600V TRIAC
• Manufacturer: ON Semiconductor

Specifications of MAC997B8

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Gate Trigger Voltage (vgt): 2.5 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 10 mA
• Forward Voltage Drop: 1.9 V @ 85 A
• Mounting Style: Through Hole
• Package / Case: TO-92-3 (TO-226)
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

(1) V
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
Peak Repetitive Blocking Current
Peak On−State Voltage
Gate Trigger Current (Continuous dc)
Latching Current (V
Gate Trigger Voltage (Continuous dc)
Gate Non−Trigger Voltage
Holding Current
Turn-On Time
Rate of Change of Commutating Current
Critical Rate of Rise of Off−State Voltage
Repetitive Critical Rate of Rise of On−State Current
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(V
(I
(V
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
MT2(+), G(+) All Types
MT2(+), G(−) All Types
MT2(−), G(−) All Types
MT2(−), G(+) All Types
(V
MT2(+), G(+) All Types
MT2(+), G(−) All Types
MT2(−), G(−) All Types
MT2(−), G(+) All Types
(V
All Four Quadrants
(V
(V
(V
T
(V
Pulse Width = 20 μs, IPKmax = 15 A, diG/dt = 1 A/μs, f = 60 Hz
DRM
TM
J
D
D
D
D
D
D
D
D
= 110°C, f = 250 Hz, with Snubber)
= Rated V
= 12 Vdc, R
= 12 Vdc, R
= 12 V, R
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
= Rated V
= 400 V, I
= Rated V
= ".85 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
and V
RRM
L
TM
DRM
DRM
DRM
= 100 Ohms, T
for all types can be applied on a continuous basis. Blocking
L
L
= .84 A, Commutating dv/dt = 1.5 V/μs, Gate Open,
D
= 100 Ohms)
= 100 Ohms)
, V
, I
, Exponential Waveform, Gate Open, T
= 12 V, I
MAC997A6,A8
MAC997B6,B8
TM
RRM
= 1.0 A pk, I
; Gate Open)
Characteristic
G
= 10 mA)
J
Characteristic
= 110°C)
G
(T
= 25 mA)
C
= 25°C unless otherwise noted; Electricals apply in both directions)
http://onsemi.com
J
T
T
J
J
= 110°C)
= 25°C
= +110°C
2
I
DRM
Symbol
di/dt(c)
dv/dt
V
di/dt
V
V
I
GT
I
t
I
, I
TM
GD
GT
gt
H
L
RRM
Symbol
R
R
T
θJC
θJA
L
Min
0.1
1.6
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
10.5
200
260
Typ
1.6
1.5
2.5
.66
.77
.84
.88
1.5
2.0
75
60
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
100
1.9
5.0
5.0
5.0
7.0
3.0
3.0
3.0
5.0
2.0
2.0
2.0
2.5
10
15
20
15
15
10
10
—
—
—
—
°C/W
°C/W
Unit
°C
A/ms
Volts
Volts
Volts
V/μs
A/μs
Unit
mA
mA
mA
μA
μA
μs