STPS30150CW STMicroelectronics, STPS30150CW Datasheet - Page 3

• Manufacturer Part Number: STPS30150CW
• Description: DIODE SCHOTTKY 150V 15A TO-247
• Manufacturer: STMicroelectronics

Specifications of STPS30150CW

• Voltage - Forward (vf) (max) @ If: 920mV @ 15A
• Current - Reverse Leakage @ Vr: 6.5µA @ 150V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 150V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-5401-5; STPS30150CW

STPS30150C
0.001
Figure 1.
Figure 3.
0.01
14
12
10
0.1
8
6
4
0
2
1
0.01
0
P
P
P
F(AV)
ARM
ARM
1
(1 µs)
(W)
2
(t p )
3
0.1
Table 4.
1. Pulse test: tp = 5ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.64 x I
Average forward power dissipation
versus average forward current (per
diode)
Normalized avalanche power
derating versus pulse duration
Symbol
4
V
I
R
5
F
δ = 0.05
(1)
(2)
6
7
1
Reverse leakage current
Forward voltage drop
δ = 0.1
I
8
t (µs)
F(AV)
F(AV)
p
Static electrical characteristics (per diode)
9
(A)
δ = 0.2
10 11 12 13 14 15 16 17 18
+ 0.0073 I
Parameter
10
δ = 0.5
F
δ
100
=tp/T
2
(RMS)
δ = 1
Doc ID 7757 Rev 8
T
tp
1000
T
T
T
T
T
T
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Figure 2.
Figure 4.
1.2
0.8
0.6
0.4
0.2
1
0
Test conditions
25
18
16
14
12
10
P
8
6
4
2
0
ARM
P
0
I
F(AV)
ARM
δ
=tp/T
(25 °C)
(A)
(T j )
25
V
I
I
I
I
T
F
F
F
F
50
R
Average forward current versus
ambient temperature (
diode)
Normalized avalanche power
derating versus junction
temperature
= 15 A
= 15 A
= 30 A
= 30 A
tp
= V
50
RRM
Rth(j-a)=15°C/W
75
75
T
amb
T (°C)
Rth(j-a)=Rth(j-c)
Min.
j
(°C)
100
100
Rth(j-a)=Rth(j-c)
Typ.
0.69
TO-220FP
0.8
TO-220AB / TO-247 / D PAK
125
Characteristics
δ
= 0.5, per
Max.
125
0.92
0.75
0.86
6.5
150
8
1
2
175
Unit
mA
µA
V
3/11
150