STPS40150CW STMicroelectronics, STPS40150CW Datasheet - Page 2

• Manufacturer Part Number: STPS40150CW
• Description: DIODE SCHOTTKY 150V 20A TO-247
• Manufacturer: STMicroelectronics

Specifications of STPS40150CW

• Voltage - Forward (vf) (max) @ If: 920mV @ 20A
• Current - Reverse Leakage @ Vr: 8µA @ 150V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 150V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-3218; 497-3218-5; 497-3218

STPS40150CT/CW/CG
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 380 s, < 2%
To evaluate the conduction losses use the following equation :
P = 0.64 x I F(AV) + 0.0055 I F
Fig. 1: Conduction losses versus average current
(per diode).
22
20
18
16
14
12
10
2/6
When the diodes 1 and 2 are used simultaneously :
8
6
4
2
0
Symbol
Symbol
R
R
Tj(diode 1) = P(diode1) x R
0
R
P
V
F(AV)
th(j-c)
th(j-c)
I
th(c)
R
F
2
*
*
(W)
4
Junction to case
Junction to case
6
Reverse leakage
current
Forward voltage drop
= 0.05
8
Parameter
10
12
2
= 0.1
(RMS)
I
F(AV)
14
(A)
= 0.2
16
th(j-c)
18
(Per diode) + P(diode 2) x R
20
TO-220AB / D
TO-247
= 0.5
Tj = 25°C
Tj = 125°C
Tj = 25 C
Tj = 125°C
Tj = 25 C
Tj = 125°C
Parameter
22
=tp/T
= 1
24
T
Tests Conditions
26
tp
28
2
PAK
V
I
I
I
I
Fig. 2: Normalized avalanche power derating
versus pulse duration.
0.001
F
F
F
F
0.01
R
0.1
= 20 A
= 20 A
= 40 A
= 40 A
1
0.01
= V
P
P
ARM
ARM p
RRM
Per diode
Per diode
Coupling
th(c)
(1µs)
(t )
Total
Total
0.1
Min.
1
t (µs)
p
Typ.
0.69
0.79
Value
2
2
0.85
0.85
1.2
1.2
0.5
10
Max.
0.92
0.75
1.00
0.86
11
8
100
°C/W
°C/W
°C/W
Unit
Unit
mA
µA
V
1000