STPS61H100CW STMicroelectronics, STPS61H100CW Datasheet - Page 3

DIODE SCHOTTKY 100V 30A TO-247

STPS61H100CW

Manufacturer Part Number
STPS61H100CW
Description
DIODE SCHOTTKY 100V 30A TO-247
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS61H100CW

Voltage - Forward (vf) (max) @ If
790mV @ 30A
Current - Reverse Leakage @ Vr
16µA @ 100V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-247-3
Product
Schottky Rectifiers
Peak Reverse Voltage
100 V
Forward Continuous Current
30 A
Max Surge Current
450 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.93 V at 60 A
Maximum Reverse Leakage Current
16 uA
Operating Temperature Range
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-3220
497-3220-5
497-3220

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STPS61H100CW
Manufacturer:
ST
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Part Number:
STPS61H100CW
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
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Quantity:
3 600
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1.E+02
1.E+01
1.E+00
Fig. 9: Forward voltage drop versus forward
current (per diode).
100
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
400
350
300
250
200
150
100
1.E-01
1.E-02
1.E-03
1.E-04
10
50
1.E-03
1
0
0.0
I
I (A)
FM
M
10
I
M
I (mA)
R
(A)
0.1
20
=0.5
t
0.2
0.3
30
(typical values)
T =125°C
j
1.E-02
0.4
(maximum values)
40
T =125°C
j
0.5
V
50
T =150°C
T =125°C
T =100°C
T =75°C
T =50°C
T =25°C
V (V)
t(s)
j
j
j
j
j
j
FM
0.6
R
(V)
60
0.7
(maximum values)
1.E-01
T =25°C
0.8
j
70
0.9
80
1.0
T =125°C
90
T =25°C
T =75°C
c
c
c
1.1
1.E+00
100
1.2
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
10.00
1.00
0.10
1.E-03
Z
Single pulse
th(j-c)
1
C(nF)
= 0.5
= 0.2
= 0.1
/R
th(j-c)
1.E-02
t (s)
V (V)
p
R
10
STPS61H100CW
1.E-01
=tp/T
V
OSC
F=1MHz
T =25°C
=30mV
j
T
RMS
tp
1.E+00
3/4
100

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