STPS20120CR STMicroelectronics, STPS20120CR Datasheet - Page 4

• Manufacturer Part Number: STPS20120CR
• Description: DIODE SCHOTTKY 120V I2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS20120CR

• Voltage - Forward (vf) (max) @ If: 920mV @ 10A
• Current - Reverse Leakage @ Vr: 10µA @ 120V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 120V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-4625-5

Characteristics
4/9
Figure 7.
Figure 9.
Figure 11. Forward voltage drop versus
1.E+01
1.E+00
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
10
1.E-03
1
0.0
I
Z
FM
th(j-c)
Single pulse
0
I (mA)
R
(A)
0.2
10
/R
th(j-c)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220AB & I
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
forward current (per diode)
20
(maximum values)
0.4
(typical values)
T =125°C
T =125°C
j
j
30
1.E-02
0.6
40
50
0.8
V
FM
t (s)
V (V)
T =150°C
T =125°C
T =100°C
T =75°C
T =50°C
T =25°C
p
j
j
j
j
j
j
R
60
(V)
1.0
70
1.E-01
(maximum values)
1.2
T =25°C
80
j
δ
90
=tp/T
1.4
100
T
1.6
110
tp
2
1.E+00
PAK)
120
1.8
Figure 8.
Figure 10. Junction capacitance versus
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1000
100
1.E-03
10
Z
Single pulse
1
C(pF)
th(j-c)
/R
th(j-c)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
reverse voltage applied (typical
values, per diode)
1.E-02
1.E-01
V (V)
t (s)
p
R
10
1.E+00
δ
STPS20120C
=tp/T
V
OSC
F=1MHz
T =25°C
=30mV
j
T
RMS
tp
1.E+01
100