TIC225M-S Bourns Inc., TIC225M-S Datasheet - Page 4

• Manufacturer Part Number: TIC225M-S
• Description: Triacs 600V 8A TRIAC
• Manufacturer: Bourns Inc.

Specifications of TIC225M-S

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 70 A
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Gate Trigger Voltage (vgt): 2 V
• Gate Trigger Current (igt): 30 mA
• Holding Current (ih Max): 20 mA
• Forward Voltage Drop: 2.1 V @ 12 A
• Mounting Style: Through Hole
• Package / Case: TO-220
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TIC225 SERIES
SILICON TRIACS
NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed
4
50 Hz
so that the off-state-voltage duration is approximately 800 µs.
C1
R1
DUT
L1
10
PARAMETER MEASUREMENT INFORMATION
I
MT2
9
8
7
6
5
4
3
2
1
0
0
V
MAXIMUM RMS ON-STATE CURRENT
V
MT2
R
AC
I
G
G
THERMAL INFORMATION
25
CASE TEMPERATURE
T
C
- Case Temperature - °C
Note A
50
See
Figure 5.
Figure 6.
vs
75
V
V
I
MT2
I
MT2
AC
G
100
R O D U C T
125
Specifications are subject to change without notice.
TI07AB
I
TRM
150
JULY 1975 - REVISED SEPTEMBER 2002
V
DRM
dv/dt
I N F O R M A T I O N
10%
63%
PMC2AA