TIC225M-S Bourns Inc., TIC225M-S Datasheet

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TIC225M-S

Manufacturer Part Number
TIC225M-S
Description
Triacs 600V 8A TRIAC
Manufacturer
Bourns Inc.
Datasheet

Specifications of TIC225M-S

Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
70 A
Off-state Leakage Current @ Vdrm Idrm
2 mA
Gate Trigger Voltage (vgt)
2 V
Gate Trigger Current (igt)
30 mA
Holding Current (ih Max)
20 mA
Forward Voltage Drop
2.1 V @ 12 A
Mounting Style
Through Hole
Package / Case
TO-220
Maximum Operating Temperature
+ 110 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
† All voltages are with respect to Main Terminal 1.
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
electrical characteristics at 25°C case temperature (unless otherwise noted )
JULY 1975 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs)
Average gate power dissipation at (or below) 85°C case temperature (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
I
DRM
GT
R O D U C T
Sensitive Gate Triacs
8 A RMS, 70 A Peak
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
4. This value applies for a maximum averaging time of 20 ms.
PARAMETER
Repetitive peak
off-state current
Gate trigger
current
the rate of 200 mA/°C.
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
GT
of 5 mA (Quadrant 1)
I N F O R M A T I O N
V
V
V
V
V
D
supply
supply
supply
supply
= rated V
= +12 V†
= +12 V†
= -12 V†
= -12 V†
RATING
DRM
I
R
R
R
R
TEST CONDITIONS
G
L
L
L
L
= 0
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
MT1
MT2
G
Pin 2 is in electrical contact with the mounting base.
T
t
t
t
t
p(g)
p(g)
p(g)
p(g)
TIC225M
TIC225D
TIC225S
TIC225N
C
= 110°C
> 20 µs
> 20 µs
> 20 µs
> 20 µs
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
I
P
T(RMS)
V
I
P
T
I
G(AV)
TSM
T
DRM
GM
T
GM
stg
C
L
MIN
2
3
1
SILICON TRIACS
TYP
-3.8
-40 to +110
-40 to +125
2.3
TIC225 SERIES
-3
6
VALUE
400
600
700
800
230
2.2
0.9
±1
70
8
MAX
-20
-10
±2
30
5
MDC2ACA
UNIT
UNIT
mA
mA
°C
°C
°C
W
W
V
A
A
A
1

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TIC225M-S Summary of contents

Page 1

... V supply † All voltages are with respect to Main Terminal JULY 1975 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. MT1 MT2 G Pin electrical contact with the mounting base. RATING TIC225D TIC225M TIC225S TIC225N TEST CONDITIONS DRM Ω = +12 V† ...

Page 2

... All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, t the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: = 100 Ω µ ≤ ...

Page 3

... V = ± Ω µs p( 0·1 -60 - 100 120 TC07AD 1000 V supply + - 100 100 100 120 -60 TIC225 SERIES SILICON TRIACS GATE TRIGGER VOLTAGE vs CASE TEMPERATURE ± supply GTM Ω µs p( 100 T - Case Temperature - °C C Figure 2. LATCHING CURRENT vs CASE TEMPERATURE V I supply ...

Page 4

... TIC225 SERIES SILICON TRIACS 10 PARAMETER MEASUREMENT INFORMATION L1 I MT2 DUT R1 NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed so that the off-state-voltage duration is approximately 800 µs. 4 THERMAL INFORMATION MAXIMUM RMS ON-STATE CURRENT ...

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