DAN222TL Rohm Semiconductor, DAN222TL Datasheet - Page 2

• Manufacturer Part Number: DAN222TL
• Description: DIODE SWITCH 80V 100MA SOT-416
• Manufacturer: Rohm Semiconductor

Specifications of DAN222TL

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 70V
• Current - Average Rectified (io) (per Diode): 100mA
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Forward Current If(av): 100mA
• Repetitive Reverse Voltage Vrrm Max: 80V
• Forward Voltage Vf Max: 1.2V
• Reverse Recovery Time Trr Max: 4ns
• Forward Surge Current Ifsm Max: 4A
• Operating: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DAN222TLTR

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
DAN222
100
100
950
940
930
920
910
900
0.1
20
15
10
10
10
5
0
1
1
0.1
0 100 200 300 400 500 600 700 800 900 100
FORWARD VOLTAGE：VF(mV)
Ta=150℃
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
Ta=125℃
VF DISPERSION MAP
IFSM DISRESION MAP
1
AVE:921.7mV
TIME:t(ms)
AVE:3.50A
Ta=75℃
Ifsm
Ifsm
10
IF=100mA
8.3ms
Ta=25℃
n=30pcs
Ta=-25℃
t
1cyc
Ta=25℃
100
0
10000
1000
1000
100
0.01
100
100
10
0.1
90
80
70
60
50
40
30
20
10
10
10
1
0.001
0
9
8
7
6
5
4
3
2
1
0
1
0
10
0.01
REVERSE VOLTAGE：VR(V)
Rth-t CHARACTERISTICS
VR-IR CHARACTERISTICS
20
trr DISPERSION MAP
IR DISPERSION MAP
0.1
AVE:9.655n
30
2/2
AVE:1.93ns
Mounted on erpoxy board
IM=1mA
TIME:t(s)
1ms
40
1
300us
Ta=150℃
time
50
10
IF=10mA
60
Ta=25℃
VR=80V
n=10pcs
Rth(j-a)
Ta=-25℃
Ta=25℃
RL=50Ω
n=10pcs
IF=5mA
100
VR=6V
Ta=75℃
Ta=25℃
Rth(j-c)
Ta=125℃
70
1000
80
0.1
10
10
10
9
8
7
6
5
4
3
2
1
0
1
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
1
IFSM-CYCLE CHARACTERISTICS
AVE:0.97kV
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
C=200pF
ESD DISPERSION MAP
5
R=0Ω
Ct DISPERSION MAP
NUMBER OF CYCLES
AVE:1.17pF
Ifsm
10
10
2011.04 - Rev.B
AVE:2.54kV
8.3ms
C=100pF
R=1.5kΩ
1cyc
Data Sheet
15
8.3ms
f=1MHz
Ta=25℃
VR=6V
f=1MHz
n=10pcs
100
20