DAN222TL Rohm Semiconductor, DAN222TL Datasheet
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Manufacturer Part Number
DAN222TL
Description
DIODE SWITCH 80V 100MA SOT-416
Manufacturer
Rohm Semiconductor
Specifications of DAN222TL
Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 70V
Current - Average Rectified (io) (per Diode)
100mA
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Forward Current If(av)
100mA
Repetitive Reverse Voltage Vrrm Max
80V
Forward Voltage Vf Max
1.2V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
4A
Operating
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DAN222TLTR
Available stocks
Ultra high speed switching
1) Ultra small mold type. (EMD3)
2) High reliability.
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (single)
Average rectified forward voltage (single)
Surge current (t=1us)
Power dissipation
Junction temperature
Storage temperature
Rated in slash put frequency
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
DAN222
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Band Switching Diode
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Taping specifications (Unit : mm)
Symbol
Symbol
I
Tstg
V
surge
V
I
Pd
V
Ct
Io
Tj
trr
FM
I
RM
f
R
R
F
1.8±0.1
4.0±0.1
-0.05
0.2±0.1
Dimensions (Unit : mm)
JEITA : SC-75A
JEDEC : SOT-416
ROHM : EMD3
Min.
-
-
-
-
dot (year week factory)
2.0±0.05
55 to 150
(2)
0.5
1.6±0.2
1.0±0.1
Limits
1/2
300
100
150
150
100
Typ.
80
80
4
-
-
-
-
0.5
0.05
0.3±0.1
(3)
(1)
Max.
1.2
0.1
3.5
4
φ1.55±0.1
0
φ1.5 0.1
0
0.15±0.05
0.7±0.1
0.55±0.1
MHz
mW
Unit
Unit
mA
mA
μA
°C
°C
pF
ns
V
V
V
A
φ0.5±0.1
0~0.1
I
V
V
V
F
=100mA
R
R
R
=70V
=6V , f=1MHz
=6V , IF=5mA , RL=50Ω
Structure
Land size figure (Unit : mm)
Conditions
EMD3
Data Sheet
0.6
0.5
2011.04 - Rev.B
0.7
1.0
0.5
0.6
0.3±0.1
0.9±0.2
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DAN222TL Summary of contents
Band Switching Diode DAN222 Applications Ultra high speed switching Features 1) Ultra small mold type. (EMD3) 2) High reliability. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current (single) Average rectified ...
DAN222 100 Ta=75℃ Ta=125℃ 10 Ta=150℃ 1 0.1 0 100 200 300 400 500 600 700 800 900 100 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 950 Ta=25℃ IF=100mA 940 n=30pcs 930 920 910 AVE:921.7mV 900 VF DISPERSION MAP 20 Ifsm 15 8.3ms ...
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