BAT54CW,115 NXP Semiconductors, BAT54CW,115 Datasheet - Page 4

• Manufacturer Part Number: BAT54CW,115
• Description: DIODE SCHOTTKY 30V DL CC SOT323
• Manufacturer: NXP Semiconductors

Specifications of BAT54CW,115

• Package / Case: SC-70-3, SOT-323-3
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Reverse Recovery Time (trr): 5ns
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Common Cathode
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1613-2; 934028900115; BAT54CW T/R

Philips Semiconductors
GRAPHICAL DATA
1996 Mar 19
handbook, halfpage
Schottky barrier (double) diodes
(mA)
f = 1 MHz; T
(1) T
(2) T
(3) T
Fig.8
I F
(pF)
10
Fig.6
C d
10
10
10
1
15
10
amb
amb
amb
3
2
1
0
5
0
0
(1)
= 125 C.
= 85 C.
= 25 C.
Diode capacitance as a function of reverse
voltage; typical values.
amb
Forward current as a function of forward
voltage; typical values.
(2)
= 25 C.
(3)
10
0.4
(1)
(2)
0.8
20
(3)
V
V F (V)
R
MSA891
(V)
MSA892
30
1.2
4
handbook, halfpage
I F
I R
(1) T
(2) T
(3) T
( A)
I R
Fig.7
10
10
10
10
amb
amb
amb
1
3
2
1
0
= 125 C.
= 85 C.
= 25 C.
Fig.9 Reverse recovery definitions.
Reverse current as a function of reverse
voltage; typical values.
dI
dt
F
Q
r
10
t f
BAT54W series
20
Product specification
V
R
(1)
(2)
(3)
(V)
MSA893
MRC129 - 1
10%
90%
30
t