BAT54A,215 NXP Semiconductors, BAT54A,215 Datasheet - Page 3

• Manufacturer Part Number: BAT54A,215
• Description: DIODE SCHOTTKY 30V DUAL CA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAT54A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Reverse Recovery Time (trr): 5ns
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Common Anode
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 30V
• Avg. Forward Curr (max): 0.2A
• Rev Curr: 2uA
• Peak Non-repetitive Surge Current (max): 0.6A
• Forward Voltage: 0.8V
• Operating Temp Range: -65C to 125C
• Package Type: TO-236AB
• Rev Recov Time: 5ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1611-2; 933976360215; BAT54A T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
CHARACTERISTICS
T
2002 Mar 04
Per diode
V
I
I
I
T
T
Per device
P
R
Per diode
V
I
t
C
amb
F
FRM
FSM
R
rr
SYMBOL
SYMBOL
SYMBOL
stg
j
R
tot
F
Schottky barrier (double) diodes
th j-a
d
= 25 °C unless otherwise specified.
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
total power dissipation
thermal resistance from junction to
ambient
forward voltage
reverse current
reverse recovery time
diode capacitance
PARAMETER
PARAMETER
PARAMETER
t
t
T
note 1
see Fig.3
V
when switched from I
to I
measured at I
see Fig.6
f = 1 MHz; V
3
p
p
amb
R
≤ 1 s; δ ≤ 0.5
< 10 ms
I
I
I
I
I
F
F
F
F
F
R
= 25 V; see Fig.4
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
= 10 mA; R
≤ 25 °C
CONDITIONS
CONDITIONS
CONDITIONS
R
R
= 1 V; see Fig.5
= 1 mA;
L
= 100 Ω;
F
= 10 mA
−
−
−
−
−65
−
−
240
320
400
500
800
2
5
10
MIN.
VALUE
MAX.
BAT54 series
500
Product data sheet
30
200
300
600
+150
125
230
MAX.
mV
mV
mV
mV
mV
μA
ns
pF
UNIT
UNIT
K/W
V
mA
mA
mA
°C
°C
mW
UNIT