BAV74,215 NXP Semiconductors, BAV74,215 Datasheet - Page 5

• Manufacturer Part Number: BAV74,215
• Description: DIODE SW DBL 50V 215MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAV74,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 50V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Common Cathode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1 V @ 0.1 A
• Maximum Reverse Leakage Current: 0.1 uA @ 50 V
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1623-2; 933700010215; BAV74 T/R

NXP Semiconductors
2004 Jan 14
handbook, halfpage
High-speed double diode
(1) V
(2) V
(3) V
Fig.5
(nA)
I R
10
10
10
10
R
R
R
10
= 50 V; maximum values.
= 50 V; typical values.
= 25 V; typical values.
5
4
3
2
0
Reverse current as a function of junction
temperature.
(1)
(2)
100
(3)
T j (
o
C)
MBG376
200
5
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
0.8
0.6
0.4
0.2
0
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
4
8
Product data sheet
12
V R (V)
MBG446
BAV74
16