MBR10100CT Taiwan Semiconductor, MBR10100CT Datasheet - Page 2

• Manufacturer Part Number: MBR10100CT
• Description: Schottky (Diodes & Rectifiers) 10 Amp 100 Volt Dual
• Manufacturer: Taiwan Semiconductor

Specifications of MBR10100CT

• Product: Schottky Rectifiers
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 10 A
• Max Surge Current: 120 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.85 V at 5 A
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: C0

1,000
5,000
100
500
0.1
10
15
6
5
4
3
2
1
0
5
1
0.1
0
0
FIG.1- FORWARD CURRENT DERATING CURVE
FIG.5- TYPICAL JUNCTION CAPACITANCE
FIG.3- TYPICAL FORWARD CHARACTERISTICS
RATINGS AND CHARACTERISTIC CURVES (MBR1035CT THRU MBR10200CT)
Tj=25 C
Pulse Width=300 s
1% Duty Cycle
MBR1035CT-1045CT
MBR1050CT-1060CT
0.2
o
0.4
1.0
CASE TEMPERATURE. ( C)
50
FORWARD VOLTAGE. (V)
REVERSE VOLTAGE. (V)
0.6
0.8
RESISTIVE OR
INDUCTIVE LOAD
MBR10150CT-10200CT
100
o
10
MBR1090CT-10100CT
1.0
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
0
1.2
150
100
1.4
0.001
10.0
180
150
120
0.01
100
0.1
90
60
30
10
0.1
50
1
0
1
0.01
0
0.1
FIG.4- TYPICAL REVERSE CHARACTERISTICS
FIG.6- TYPICAL TRANSIENT THERMAL
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
20
CHARACTERISTICS PER LEG
SURGE CURRENT
40
0.1
NUMBER OF CYCLES AT 60Hz
T, PULSE DURATION. (sec)
60
1
Tj=125 C
80
Tj=75 C
0
1
0
Tj=25 C
100
Tj=Tj max.
8.3ms Single Half Sine-Wave
JEDEC Method
0
120
10
Version: C08
10
140
100
100