BAS70 Taiwan Semiconductor, BAS70 Datasheet

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BAS70

Manufacturer Part Number
BAS70
Description
Schottky (Diodes & Rectifiers) 70 Volt 70mA Single
Manufacturer
Taiwan Semiconductor
Datasheet

Specifications of BAS70

Product
Schottky Diodes
Peak Reverse Voltage
70 V
Forward Continuous Current
0.07 A
Max Surge Current
100 A
Configuration
Single
Recovery Time
5 ns
Forward Voltage Drop
1 V at 0.15 A
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
- 55 C to + 125 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
RF

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Features
Mechanical Data
Maximum Ratings
Type Number
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Electrical Characteristics
Type Number
Reverse Breakdown Voltage (Note 2), IR=10uA
Reverse Leakage Current tp<300us, VR=50V
Forward Voltage Drop
Junction Capacitance
Reverse Recovery Time (Note 3)
Notes:
Low turn-on voltage
Fast switching
PN junction guard Ring for transient and ESD
protection
Case: SOT-23, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Marking & Polarity: See diagram
Weight: 0.008 grams
BAS70 Marking: 73
1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Test Period < 3000uS.
3. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=1.0mA, RL=100Ω.
Method 208
VR=0, f=1.0MHz
tp<300us, IF=15mA
tp=300us, IF=1.0mA
TA=
@ t ≦1.0s
25
BAS70-04 Marking: 74
o
C unless otherwise specified
200m Watts Surface Mount Schottky Barrier Diode
Symbol
- 14 -
V
Symbol
V
V
(BR)
Cj
trr
I
V
R
V
R(RMS)
F
I
T
R
RWM
FSM
RRM
Pd
V
T
I
STG
θJA
F
R
J
BAS70-05 Marking: 75
BAS70 / -04 / -05 / -06
Dimensions in inches and (millimeters)
0.024(0.61)
0.018(0.45)
Min
70
0.080(2.05)
0.070(1.78)
0.120(3.05)
0.104(2.65)
0.020(0.51)
0.015(0.37)
_
_
_
_
-55 to + 125
-65 to + 150
BAS70
100
200
625
0.001(0.013)
0.006(0.15)
70
49
70
0.041(1.05)
0.047(0.89)
SOT-23
0.055(1.40)
0.047(1.19)
0.043(1.10)
0.035(0.89)
BAS70-06 Marking: 76
1000
Max
0.024(0.61)
0.018(0.45)
100
410
2.0
5.0
0.098(2.50)
0.083(2.10)
0.007(0.178)
0.003(0.076)
Units
Version: C07
K/W
mW
mA
mA
o
o
V
V
C
C
Units
mV
nA
nS
pF

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BAS70 Summary of contents

Page 1

... Reverse Recovery Time (Note 3) Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature. 2. Test Period < 3000uS. 3. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=1.0mA, RL=100Ω. BAS70 / -04 / -05 / -06 200m Watts Surface Mount Schottky Barrier Diode 0.024(0.61) 0.018(0.45) Dimensions in inches and (millimeters) BAS70-04 Marking: 74 ...

Page 2

... RATINGS AND CHARACTERISTIC CURVES (BAS70 / -04 / -05 / -06) FIG.1- POWER DERATING CURVE 200 100 AMBIENT TEMPERATURE ( C) A FIG.3- TYPICAL FORWARD CHARACTERISTICS 100 125 - 0.1 0 0.2 0.4 0.6 0.8 1.0 V INSTANTANEOUS FORWARD VOLTAGE. (V) F, FIG.5- TYPICAL TOTAL CAPACITANCE VS REVERSE VOLTAGE 2.0 1 REVERSE VOLTAGE FIG.2- MAXIMUM NON-REPETITIVE PEAK ...

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