MM908E625ACDWB Freescale Semiconductor, MM908E625ACDWB Datasheet - Page 33

IC QUAD HALF BRDG MCU/LIN 54SOIC

MM908E625ACDWB

Manufacturer Part Number
MM908E625ACDWB
Description
IC QUAD HALF BRDG MCU/LIN 54SOIC
Manufacturer
Freescale Semiconductor

Specifications of MM908E625ACDWB

Applications
Automotive Mirror Control
Core Processor
HC08
Program Memory Type
FLASH (16 kB)
Controller Series
908E
Ram Size
512 x 8
Interface
SCI, SPI
Number Of I /o
13
Voltage - Supply
8 V ~ 18 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
54-SOIC (0.300", 7.50mm Width) Exposed Pad
Program Memory Size
16 KB
Number Of Programmable I/os
54
Number Of Timers
16
Operating Supply Voltage
- 18 V to + 28 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MM908E625ACDWB
Manufacturer:
FREESCALE Semiconductor
Quantity:
26
OFFSET CHOPPING
set, HB1 and HB2 will continue to switch on the low-side
MOSFETs with the rising edge of the FGEN signal and HB3
and HB4 will switch on the low-side MOSFETs with the falling
Analog Integrated Circuit Device Data
Freescale Semiconductor
Low-Side Output
If bit OFC_EN in the H-Bridge Control Register (HBCTL) is
Coil Current
FGEN Input
(MCU PWM
Half-Bridge
Signal)
Minimum 50 µs
Figure 18. Half-Bridge Current Limitation
feature allows the reduction of EMI due to a reduction of the
di/dt
edge on the FGEN input. In step motor applications this
(Figure
19).
LOGIC COMMANDS AND REGISTERS
FUNCTIONAL DEVICE OPERATION
H-Bridge low-side
MOSFET will be switched
off if select current limit is
reached.
H-Bridge low-side
MOSFET will be turned on
with each rising edge of
the FGEN input.
t
t
t
908E625
33

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