STC03DE170 STMicroelectronics, STC03DE170 Datasheet

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STC03DE170

Manufacturer Part Number
STC03DE170
Description
TRANS ESBT 1700V 3A TO-247-4L
Manufacturer
STMicroelectronics
Series
ESBT®r
Datasheet

Specifications of STC03DE170

Transistor Type
NPN - Emitter Switched Bipolar
Applications
Gate Driver
Voltage - Rated
1700V (1.7kV)
Current Rating
3A
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3517-5

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Table 1: General Features
n
n
n
n
APPLICATION
n
DESCRIPTION
The STC03DE170 is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STC03DE170 is designed for use in aux
flyback smps for any three phase application.
Table 2: Order Code
October 2004
LOW EQUIVALENT ON RESISTANCE
VERY FAST-SWITCH, UP TO 150 kHz
SQUARED RBSOA, UP TO 1700 V
VERY LOW C
AUX SMPS FOR THREE PHASE MAINS
V
CS(ON)
STC03DE170
Part Number
1 V
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR
ISS
DRIVEN BY RG = 4.7 W
1.8 A
I
C
STC03DE170
Marking
R
0.55 W
CS(ON)
Figure 1: Package
Figure 2: Internal Schematic Diagram
ESBT™ 1700 V - 3 A - 0.55 W
TO247-4L
Package
Electrical Symbol
TO247-4L
STC03DE170
Device Structure
Packaging
Rev. 2
TUBE
1/9

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STC03DE170 Summary of contents

Page 1

... The STC03DE170 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE170 is designed for use in aux flyback smps for any three phase application. Table 2: Order Code Part Number ...

Page 2

... STC03DE170 Table 3: Absolute Maximum Ratings Symbol V Collector-Source Voltage (V CS(SS) V Base-Source Voltage (I BS(OS) V Source-Base Voltage (I SB(OS) V Gate-Source Voltage GS I Collector Current C I Collector Peak Current ( Base Current B I Base Peak Current ( Total Dissipation at T tot T Storage Temperature stg T Max. Operating Junction Temperature ...

Page 3

... CSW Voltage without Snubber V Collector-Source Dynamic CS(dyn) Voltage (500 ns) V Collector-Source Dynamic CS(dyn) Voltage (1ms) Test Conditions 1200 V G Clamp 0 400 Clamp 0 0 Bpeak t = 500 ns peak 400 Clamp 0 0 Bpeak t = 500 ns peak STC03DE170 Min. Typ. Max. 690 32 1500 3 2.2 Unit 3/9 ...

Page 4

... STC03DE170 Figure 3: Safe Operating Area Figure 4: Reverse Biased Safe Operating Area Figure 5: DC Current Gain 4/9 Figure 6: Output Characteristics Figure 7: Gate Threshold Voltage vs Tempera- ture Figure 8: DC Current Gain ...

Page 5

... Figure 9: Collector-Source On Voltage Figure 10: Base-Source On Voltage Figure 11: Inductive Load Switching Time Figure 12: Collector-Source On Voltage Figure 13: Base-Source On Voltage Figure 14: Inductive Load Switching Time STC03DE170 5/9 ...

Page 6

... STC03DE170 Figure 15: Dynamic Collector-Emitter Satura- tion Voltage Figure 16: Inductive Load Enlargement FBSOA Circuit Table 6: Components, Values 220 BA157 ≤ 100 Pulse Time = 6/9 ...

Page 7

... TO247-4L MECHANICAL DATA DIM. MIN. A 4.85 A1 2.20 b 0.95 b1 1.30 b2 2.50 c 0.40 D 19.85 E 15. 14.20 L1 3.70 L2 ØP 3.55 ØR 4.50 S STC03DE170 mm TYP. MAX. 5.15 2.60 1.10 1.30 1.70 2.90 0.80 20.15 15.75 2.54 5.08 14.80 4.30 18.50 3.65 5.50 5.50 7536918A 7/9 ...

Page 8

... STC03DE170 Table 7: Revision History Date Release 13-Sep-2004 1 04-Oct-2004 2 8/9 Change Designator First Release. Figure 15 has been updated on page 6. ...

Page 9

... All other names are the property of their respective owners Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies www.st.com STC03DE170 9/9 ...

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