J108,126 NXP Semiconductors, J108,126 Datasheet - Page 6

• Manufacturer Part Number: J108,126
• Description: JFET N-CH 25V 50MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of J108,126

• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Current - Drain (idss) @ Vds (vgs=0): 80mA @ 5V
• Drain To Source Voltage (vdss): 25V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 10V @ 1µA
• Input Capacitance (ciss) @ Vds: 30pF @ 0V
• Resistance - Rds(on): 8 Ohm
• Mounting Type: Through Hole
• Power - Max: 400mW
• Configuration: Single
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: + / - 25 V
• Gate-source Cutoff Voltage: - 10 V
• Gate-source Breakdown Voltage: - 25 V
• Drain Current (idss At Vgs=0): 80 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
PACKAGE OUTLINE
1996 Jul 30
N-channel silicon junction FETs
Dimensions in mm.
(1) Terminal dimensions in this zone are uncontrolled.
max
4.8
2.54
1.7
1.4
4.2 max
1
2
3
0.66
0.56
Fig.4 TO-92 (SOT54).
5.2 max
6
2.0 max
12.7 min
(1)
MBC014 - 1
J108; J109; J110
Product specification
0.40
0.48
0.40
min