HMMC-5034 Avago Technologies US Inc., HMMC-5034 Datasheet - Page 3

• Manufacturer Part Number: HMMC-5034
• Description: Discontinued / 37-43GHz GaAs MMIC Amplifier
• Manufacturer: Avago Technologies US Inc.
• Type: Power Amplifierr

Specifications of HMMC-5034

• Number Of Channels: 1
• Frequency (max): 43GHz
• Output Power: 22@42500MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (min): 2V
• Single Supply Voltage (typ): 4.5V
• Single Supply Voltage (max): 5V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Supply Current: 285@4.5VmA
• Operating Temperature Classification: Industrial
• Operating Temp Range: -55C to 95C
• Lead Free Status / Rohs Status: Compliant

Applications
The HMMC-5034 MMIC is a
broadband power amplifier de-
signed for use in communica-
tions transmitters that operate
in various frequency bands
within 37 GHz and 42.5 GHz. It
can be attached to the output of
the HMMC-5040 increasing the
power handling capability of
transmitters requiring linear op-
eration.
Biasing and Operation
The recommended DC bias con-
dition is with both drains (V
and V
volt supply (V
(V
adjustable negative voltage sup-
ply (V
or 13. The gate voltage is adjust-
ed for a total drain supply cur-
rent of commonly 300 mA or
less.
The RF input and output ports
are AC–coupled.
An output power detector net-
work is also supplied. The
Det.Out port provides a DC volt-
age that is generated by the RF
power at the RF-Output port.
The Det.Ref pad provides a DC
reference voltage that can be
G1
and V
D2
GG
) connected to single 4.5
) as shown in Figures 12
RF Input
G2
) connected to an
DD
) and both gates
(Optional)
D1
V
V
G1
G1
Stage 1
used to nullify the effects of tem-
perature variations on the de-
tected RF voltage. The
differential voltage between the
Det.Ref and Det.Out bonding
pads can be correlated to the RF
power emerging from the RF-
Output port. A bond wire at-
taching both V
the supply will assure symmet-
ric operation and minimize any
DC offset voltage between
Det.Ref and Det.Out (at no RF
output power).
No ground wires are needed be-
cause ground connections are
made with plated through-holes
to the backside of the device.
Assembly Techniques
Electrically and thermally con-
ductive epoxy die attach is the
preferred assembly method. Sol-
der die attach using a fluxless
gold-tin (AuSn) solder preform
can also be used. The device
should be attached to an electri-
cally conductive surface to com-
plete the DC and RF ground
paths. The backside metalliza-
tion on the device is gold.
It is recommended that the elec-
trical connections to the bond-
ing pads be made using 0.7-1.0
mil diameter gold wire. The mi-
Simplified Schematic Diagram
(Optional)
V
V
D1
D1
(Optional)
V
Figure 1.
G2
V
G2
D2
Stage 2
bond pads to
(Optional)
V
V
D2
D2
Det.Out
D2
D1
Det.Ref
R1
crowave/millimeter-wave con-
nections should be kept as short
as possible to minimize induc-
tance. For assemblies requiring
long bond wires, multiple wires
can be attached to the RF bond-
ing pads.
Thermosonic wedge is the pre-
ferred method for wire bonding
to the gold bond pads. A guided-
wedge at an ultrasonic power
level of 64 dB can be used for
the 0.7 mil wire. The recom-
mended wire bond stage tem-
perature is 150 2 C.
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assem-
bly.
MMIC ESD precautions, han-
dling considerations, die attach
and bonding methods are criti-
cal factors in successful GaAs
MMIC performance and reliabil-
ity.
Agilent application note #54,
"GaAs MMIC ESD, Die Attach
and Bonding Guidelines" pro-
vides basic information on these
subjects.
R1
C
RF Output
3