PZM12NB1,115 NXP Semiconductors, PZM12NB1,115 Datasheet - Page 5

• Manufacturer Part Number: PZM12NB1,115
• Description: DIODE ZENER 12V 300MW SOT346
• Manufacturer: NXP Semiconductors

Specifications of PZM12NB1,115

• Voltage - Zener (nom) (vz): 12V
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 9V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (max) (zzt): 10 Ohm
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Operating Temperature: -65°C ~ 150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934046310115; PZM12NB1 T/R; PZM12NB1 T/R

Table 1 Per type; PZM2.4N to PZM24N
T
2.4N
2.7N
3.0N
3.3N
3.6N
3.9N
4.3N
4.7N
5.1N
5.6N
6.2N
6.8N
7.5N
8.2N
9.1N
10N
11N
12N
13N
15N
16N
18N
20N
22N
24N
j
-XXX
PZM
= 25 C unless otherwise specified.
10.44
12.47 13.96 12.47 13.03 12.91 13.49 13.37 13.96
13.84 15.52 13.84 14.46 14.34 14.98 14.85 15.52
15.37 17.09 15.37 16.01 15.85 16.51 16.35 17.09
16.94 19.03 16.94 17.70 17.56 18.35 18.21 19.03
18.86 21.08 18.86 19.70 19.52 20.39 20.21 21.08
20.88 23.17 20.88 21.77 21.54 22.47 22.23 23.17
22.93 25.57 22.93 23.96 23.72 24.78 24.54 25.57
11.42 12.60
MIN.
2.30
2.50
2.80
3.10
3.40
3.70
4.01
4.42
4.84
5.31
5.86
6.47
7.06
7.76
8.56
9.45 10.55
B
MAX.
11.56 10.44 10.88 10.76
2.60
2.90
3.20
3.50
3.80
4.10
4.48
4.90
5.37
5.92
6.53
7.14
7.84
8.64
9.55
11.42
MIN.
2.50
2.80
3.10
3.40
3.70
4.01
4.42
4.84
5.31
5.86
6.47
7.06
7.76
8.56
9.45
at I
WORKING VOLTAGE
Z
B1
= 5 mA; t
MAX.
11.90
2.75
3.05
3.35
3.65
3.97
4.21
4.61
5.04
5.55
6.12
6.73
7.36
8.10
8.93
9.87
V
Z
(V)
11.74 12.24 12.08 12.60
MIN.
m
2.65
2.95
3.25
3.55
3.87
4.15
4.55
4.98
5.49
6.06
6.65
7.28
8.02
8.85
9.77 10.21 10.11
= 40 ms
B2
MAX.
11.22
2.90
3.20
3.50
3.80
4.10
4.34
4.75
5.20
5.73
6.33
6.93
7.60
8.36
9.23
11.10
MIN.
4.28
4.69
5.14
5.67
6.26
6.86
7.52
8.28
9.15
B3
MAX.
10.55
11.56
4.48
4.90
5.37
5.92
6.53
7.14
7.84
8.64
9.55
TYP. MAX. TYP. MAX.
275
300
325
350
375
400
410
425
400
I
Z
80
40
30
15
20
20
20
25
25
25
25
25
25
30
30
30
= 1 mA
DIFFERENTIAL
RESISTANCE
400
450
500
500
500
500
600
500
480
400
150
100
150
150
150
170
200
200
225
225
250
250
80
80
80
r
dif
( )
I
70
75
80
85
85
85
80
50
40
15
Z
6
6
2
2
2
2
2
2
2
3
4
4
4
5
6
= 5 mA
100
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
20
20
20
25
30
S
I
Z
COEFF.
Z
TEMP.
= 5 mA
TYP.
(mV/K)
11.4
12.4
14.4
16.4
18.4
20.4
at
1.6
2.0
2.1
2.4
2.4
2.5
2.5
1.4
0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
f = 1 MHz;
C
DIODE
V
MAX.
CAP.
d
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
108
105
103
110
R
at
99
97
93
88
84
80
(pF)
= 0
NON-REPETITIVE
PEAK REVERSE
at t
T
CURRENT
amb
I
p
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
3.50
3.50
3.50
3.50
3.00
3.00
2.50
2.00
1.50
1.50
1.50
1.25
1.25
ZSM
MAX.
= 100 s;
= 25 C
(A)