CY7C1470V25-200BZI Cypress Semiconductor Corp, CY7C1470V25-200BZI Datasheet - Page 20

• Manufacturer Part Number: CY7C1470V25-200BZI
• Description: CY7C1470V25-200BZI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1470V25-200BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
Over the Operating Range
Capacitance
Thermal Resistance
Document Number: 38-05290 Rev. *L
I
I
C
C
C
C
C
Note
SB3
SB4
15. Tested initially and after any design or process changes that may affect these parameters.
Parameter
ADDRESS
DATA
CTRL
CLK
I/O
Parameter
Parameter


JC
JA
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—TTL inputs
Address input capacitance
Data input capacitance
Control input capacitance
Clock input capacitance
Input/output capacitance
[15]
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Description
Description
[12, 13]
Description
[15]
(continued)
Max V
V
V
f = f
Max V
V
Test conditions follow standard
test methods and procedures for
measuring thermal impedance,
per EIA/JESD51.
IN
IN
IN
 0.3 V or
> V
MAX
 V
DD
DD
IH
DDQ
= 1/t
Test Conditions
, device deselected,
, device deselected,
or V
0.3 V,
CYC
T
IN
A
Test Conditions
= 25 C, f = 1 MHz,
 V
V
Test Conditions
V
DDQ
IL
DD
, f = 0
= 2.5 V
= 2.5 V
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speed grades
100 TQFP
Package
24.63
100 TQFP
2.28
Max
6
5
8
6
5
165 FBGA
165 FBGA
Package
Max
16.3
2.1
6
5
8
6
5
Min
–
–
–
–
209 FBGA
209 FBGA
CY7C1470V25
CY7C1472V25
CY7C1474V25
Package
Max
15.2
6
5
8
6
5
1.7
Max
200
200
200
135
Page 20 of 31
Unit
C/W
C/W
Unit
pF
pF
pF
pF
pF
Unit
mA
mA
mA
mA
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