CY7C1470V25-200BZI Cypress Semiconductor Corp, CY7C1470V25-200BZI Datasheet - Page 19

• Manufacturer Part Number: CY7C1470V25-200BZI
• Description: CY7C1470V25-200BZI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1470V25-200BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage on V
Supply voltage on V
DC to outputs in tri-state ....................–0.5 V to V
DC input voltage .................................. –0.5 V to V
Electrical Characteristics
Over the Operating Range
Document Number: 38-05290 Rev. *L
V
V
V
V
V
V
I
I
I
I
I
Notes
X
OZ
DD
SB1
SB2
12. Overshoot: V
13. T
14. Tested initially and after any design or process changes that may affect these parameters.
Parameter
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0 V to V
IH
Power supply voltage
I/O supply voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
except ZZ and MODE
Input current of MODE
Input current of ZZ
Output leakage current GND  V
V
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
(AC) < V
DD
operating supply
DD
DDQ
Description
DD
relative to GND ........–0.5 V to +3.6 V
relative to GND....... –0.5 V to +V
+ 1.5 V (Pulse width less than t
[12, 13]
[14]
[14]
for 2.5 V I/O
for 1.8 V I/O
for 2.5 V I/O, I
for 1.8 V I/O, I
for 2.5 V I/O, I
for 1.8 V I/O, I
for 2.5 V I/O
for 1.8 V I/O
for 2.5 V I/O
for 1.8 V I/O
GND  V
Input = V
Input = V
Input = V
Input = V
V
f = f
Max V
V
f = f
Max. V
V
V
DD
DD
IN
IN
IN
(min) within 200 ms. During this time V
MAX
 V
MAX
 0.3 V or
> V
= Max, I
DD
DD
IH
DDQ
DDQ
= 1/t
= 1/t
CYC
I
SS
DD
SS
DD
I
, device deselected,
, device deselected,
DD
or V
 V
 V
/2), undershoot: V
0.3 V, f = 0
OUT
CYC
CYC
+ 0.5 V
+ 0.5 V
DDQ
DDQ,
IN
OH
OH
OL
OL
 V
=1.0 mA
= 100 A
=1.0 mA
= 0 mA,
= –100 A
DD
Test Conditions
output disabled
IL
,
IL
(AC) > –2 V (Pulse width less than t
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, method 3015)
Latch-up current .................................................... > 200 mA
Operating Range
Commercial 0 °C to +70 °C
Industrial
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speed grades
Range
IH
< V
DD
and V
–40 °C to +85 °C
Temperature
DDQ
Ambient
< V
DD
.
CYC
2.375
2.375
/2).
1.26
–0.3
–0.3
Min
–30
1.7
2.0
1.6
1.7
–5
–5
–5
–
–
–
–
–
–
–
–
–
–
–
2.5 V – 5% / +
V
5%
DD
CY7C1470V25
CY7C1472V25
CY7C1474V25
V
V
DD
DD
2.625
Max
0.36
V
450
450
400
200
200
200
120
1.9
0.4
0.2
0.7
+ 0.3 V
30
+ 0.3 V
–
–
5
–
5
–
5
DD
1.7 V to V
Page 19 of 31
V
Unit
DDQ
mA
mA
mA
mA
mA
mA
mA
A
A
A
A
A
A
V
V
V
V
V
V
V
V
V
V
V
DD
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