CY7C1470BV33-200BZXI Cypress Semiconductor Corp, CY7C1470BV33-200BZXI Datasheet - Page 23

• Manufacturer Part Number: CY7C1470BV33-200BZXI
• Description: CY7C1470BV33-200BZXI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1470BV33-200BZXI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
AC Test Loads and Waveforms
Document #: 001-15031 Rev. *G
C
C
C
C
C
ADDRESS
DATA
CTRL
CLK
IO
Parameters
Parameter
3.3V IO Test Load
2.5V IO Test Load
OUTPUT
OUTPUT
Θ
Θ
JC
JA
Address Input Capacitance
Data Input Capacitance
Control Input Capacitance
Clock Input Capacitance
Input/Output Capacitance
Z
Z
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
0
0
= 50Ω
= 50Ω
Description
(a)
(a)
V
V
Description
L
L
= 1.25V
= 1.5V
R
R
L
L
= 50Ω
= 50Ω
OUTPUT
OUTPUT
3.3V
2.5V
Test conditions follow standard test
methods and procedures for
measuring thermal impedance, per
EIA/JESD51.
INCLUDING
INCLUDING
JIG AND
JIG AND
SCOPE
SCOPE
5 pF
5 pF
Test Conditions
T
A
Test Conditions
= 25°C, f = 1 MHz,
V
(b)
(b)
V
R = 317Ω
R = 1667Ω
DDQ
DD
= 3.3V
= 2.5V
R = 351Ω
R = 1538Ω
CY7C1472BV33, CY7C1474BV33
V
GND
GND
V
DDQ
DDQ
100 TQFP
Package
≤ 1 ns
≤ 1 ns
24.63
2.28
100 TQFP
Max
10%
10%
6
5
8
6
5
ALL INPUT PULSES
ALL INPUT PULSES
165 FBGA
Package
165 FBGA
90%
90%
16.3
2.1
Max
6
5
8
6
5
CY7C1470BV33
(c)
(c)
209 FBGA
209 FBGA
Package
15.2
Max
1.7
90%
90%
6
5
8
6
5
Page 23 of 31
10%
10%
≤ 1 ns
≤ 1 ns
°C/W
°C/W
Unit
Unit
pF
pF
pF
pF
pF
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