CY7C1470BV33-200BZC Cypress Semiconductor Corp, CY7C1470BV33-200BZC Datasheet - Page 24

• Manufacturer Part Number: CY7C1470BV33-200BZC
• Description: CY7C1470BV33-200BZC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1470BV33-200BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Switching Waveforms
Figure 7
Notes
Document #: 001-15031 Rev. *C
Figure 6
23. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrated CEN being used to create a pause. A Write is not performed during this cycle.
24. Device must be deselected when entering ZZ mode. See
25. IOs are in High-Z when exiting ZZ sleep mode.
In-Out (DQ)
ADDRESS
ADV/LD
BWx
Data
CEN
CLK
WE
shows ZZ Mode timing waveform.
shows NOP, STALL and DESELECT Cycles waveform.
CE
A LL INPUTS
(except ZZ)
Outputs (Q)
WRITE
D(A1)
I
A1
1
SUPPLY
CLK
ZZ
Q(A2)
READ
A2
2
(continued)
t
ZZI
STALL
t ZZ
I DDZZ
Figure 6. NOP, STALL and DESELECT Cycles
3
[24, 25]
D(A1)
“Truth Table” on page 10
Figure 7. ZZ Mode Timing
READ
Q(A3)
A3
4
Q(A2)
WRITE
D(A4)
DON’T CARE
DON’T CARE
A4
5
[20, 21, 23]
High-Z
for all possible signal conditions to deselect the device.
STALL
6
Q(A3)
CY7C1472BV33, CY7C1474BV33
UNDEFINED
NOP
7
DESELECT or READ Only
t RZZI
t ZZREC
D(A4)
READ
Q(A5)
A5
8
DESELECT
CY7C1470BV33
9
CONTINUE
DESELECT
Q(A5)
10
Page 24 of 30
t
CHZ
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