CY7C1315KV18-250BZC Cypress Semiconductor Corp, CY7C1315KV18-250BZC Datasheet - Page 24

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CY7C1315KV18-250BZC

Manufacturer Part Number
CY7C1315KV18-250BZC
Description
CY7C1315KV18-250BZC
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1315KV18-250BZC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
18M (512K x 36)
Speed
250MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1315KV18-250BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1315KV18-250BZC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY7C1315KV18-250BZCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
AC Electrical Characteristics
Over the Operating Range
Document Number: 001-58904 Rev. *C
I
V
V
Note
SB1
Parameter
Parameter
27. Overshoot: V
IH
IL
Automatic power down 
current
Input HIGH voltage
Input LOW voltage
IH
(AC) < V
Description
Description
DDQ
+ 0.85 V (Pulse width less than t
[22]
[27]
(continued)
Max V
Both ports deselected,
V
f = f
inputs static
IN
MAX
 V
DD
IH
CYC
= 1/t
,
or V
/2), Undershoot: V
Test Conditions
Test Conditions
CYC
IN
 V
,
IL
IL
333 MHz
300 MHz
250 MHz
200 MHz
167 MHz
(AC) > 1.5 V (Pulse width less than t
CY7C1313KV18, CY7C1315KV18
CY7C1311KV18, CY7C1911KV18
(× 18)
(× 36)
(× 18)
(× 36)
(× 18)
(× 36)
(× 18)
(× 36)
(× 18)
(× 36)
(× 8)
(× 9)
(× 8)
(× 9)
(× 8)
(× 9)
(× 8)
(× 9)
(× 8)
(× 9)
V
REF
Min
Min
+ 0.2
CYC
/2).
Typ
Typ
V
REF
Max
Max
270
270
270
270
260
260
260
260
250
250
250
250
250
250
250
250
250
250
250
250
– 0.2
Page 24 of 33
Unit
Unit
mA
mA
mA
mA
mA
V
V
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