CY62167DV30LL-55BVXIT Cypress Semiconductor Corp, CY62167DV30LL-55BVXIT Datasheet - Page 10

• Manufacturer Part Number: CY62167DV30LL-55BVXIT
• Description: CY62167DV30LL-55BVXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62167DV30LL-55BVXIT

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 16M (1M x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Density: 16Mb
• Access Time (max): 55ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3V
• Address Bus: 20b
• Package Type: BGA
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 30mA
• Operating Supply Voltage (min): 2.2V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 48
• Word Size: 16b
• Number Of Words: 1M
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Notes
Document Number : 38-05328 Rev. *I
30. If CE
31. During this period, the I/Os are in output state and input signals should not be applied.
ADDRESS
BHE/BLE
DATA I/O
1
CE
CE
WE
goes HIGH and CE
2
1
2
goes LOW simultaneously with WE = V
Note 31
(continued)
Figure 7. Write Cycle 4 (BHE/BLE Controlled, OE LOW)
t
SA
t
AW
IH
t
, the output remains in a high-impedance state
SCE
t
PWE
t
WC
t
BW
VALID DATA
t
SD
[30]
t
CY62167DV30 MoBL
HA
t
HD
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