CY62167DV30LL-55BVXIT Cypress Semiconductor Corp, CY62167DV30LL-55BVXIT Datasheet - Page 7

• Manufacturer Part Number: CY62167DV30LL-55BVXIT
• Description: CY62167DV30LL-55BVXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62167DV30LL-55BVXIT

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 16M (1M x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Density: 16Mb
• Access Time (max): 55ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3V
• Address Bus: 20b
• Package Type: BGA
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 30mA
• Operating Supply Voltage (min): 2.2V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 48
• Word Size: 16b
• Number Of Words: 1M
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Notes
Document Number : 38-05328 Rev. *I
DATA OUT
CURRENT
19. The device is continuously selected. OE, CE
20. WE is HIGH for read cycle.
21. Address valid prior to or coincident with CE
ADDRESS
DATA OUT
ADDRESS
BHE/BLE
SUPPLY
V
CE
CE
OE
CC
1
2
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
PU
Figure 2. Read Cycle 1 (Address Transition Controlled)
t
LZCE
t
LZBE
1
t
t
, BHE, BLE transition LOW and CE
ACE
LZOE
1
= V
Figure 3. Read Cycle 2 (OE Controlled)
t
IL
OHA
50%
t
, BHE and/or BLE = V
t
DOE
DBE
t
AA
t
RC
IL
, and CE
2
transition HIGH.
2
t
RC
= V
IH
.
DATA VALID
[20, 21]
[19, 20]
t
DATA VALID
HZOE
CY62167DV30 MoBL
t
HZBE
t
HZCE
t
PD
50%
IMPEDANCE
HIGH
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