CY62157EV30LL-55ZXE Cypress Semiconductor Corp, CY62157EV30LL-55ZXE Datasheet - Page 3

• Manufacturer Part Number: CY62157EV30LL-55ZXE
• Description: CY62157EV30LL-55ZXE
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62157EV30LL-55ZXE

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 8M (512K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-TSOP I
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Pin Configuration
Figure 1. 48-Ball VFBGA (Top View)
Product Portfolio
Document #: 38-05445 Rev. *H
Notes
CY62157EV30LL
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
2. NC pins are not connected on the die.
3. The 44-TSOP II package has only one chip enable (CE) pin.
4. The BYTE pin in the 48-TSOP I package must be tied HIGH to use the device as a 512K × 16 SRAM. The 48-TSOP I package can also be used as a 1M × 8
SRAM by tying the BYTE signal LOW. In the 1M x 8 configuration, Pin 45 is A19, while BHE, BLE and I/O8 to I/O14 pins are not used (NC).
Product
BLE
I/O
I/O
I/O
V
V
I/O
A
CC
1
SS
18
14
15
8
9
I/O
BHE
I/O
I/O
I/O
OE
NC
A
2
11
8
10
12
13
Industrial/
Range
Auto-A
Auto-E
A
A
NC
A
A
A
A
A
3
17
14
12
0
3
5
9
A
A
A
A
A
A
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
CE2
NC
BHE
BLE
A18
A17
A7
A6
A5
A4
A3
A2
A1
A
A
4
16
15
13
10
4
7
1
6
Figure 3. 48-Pin TSOP I (512K x 16/1M x 8) (Top View)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
I/O
CE
I/O
I/O
I/O
WE
A
A
[2]
5
11
Min
2
2.2
2.2
3
1
1
4
5
V
CE
I/O
V
V
I/O
I/O
I/O
NC
6
CC
CC
SS
2
0
2
6
7
Typ
Range (V)
3.0
3.0
A
D
E
G
H
B
C
F
[1]
Max
3.6
3.6
Speed
(ns)
Figure 2. 44-Pin TSOP II (Top View)
45
55
Typ
1.8
1.8
f = 1 MHz
[1]
Operating I
Max
V
V
WE
A
A
A
A
A
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
CE
A
A
A
A
A
CC
3
4
SS
18
15
14
17
16
3
0
4
2
1
1
2
4
5
7
0
3
6
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
Power Dissipation
11
12
10
13
14
15
16
17
18
19
20
21
22
Typ
CC
1
2
3
4
5
6
7
8
9
[2, 4]
CC
A16
BYTE
Vss
I/O15/A19
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
Vcc
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
Vss
CE1
A0
18
18
CY62157EV30 MoBL
= V
, (mA)
f = f
[1]
CC(typ)
max
Max
, T
25
35
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
= 25°C.
[3]
A
A
A
OE
BHE
BLE
I/O
I/O
I/O
I/O
V
V
I/O
I/O
I/O
I/O
A
A
A
A
A
A
Typ
Standby, I
5
6
7
SS
CC
8
9
10
11
12
13
15
14
13
12
11
10
9
8
2
2
[1]
(A)
Page 3 of 17
Max
30
SB2
8
®
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