CY14E256L-SZ45XI Cypress Semiconductor Corp, CY14E256L-SZ45XI Datasheet - Page 12

• Manufacturer Part Number: CY14E256L-SZ45XI
• Description: CY14E256L-SZ45XI
• Manufacturer: Cypress Semiconductor Corp
• Type: NVSRAMr

Specifications of CY14E256L-SZ45XI

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256K (32K x 8)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-SOIC (7.5mm Width)
• Word Size: 8b
• Organization: 32Kx8
• Density: 256Kb
• Interface Type: Parallel
• Access Time (max): 45ns
• Operating Supply Voltage (typ): 5V
• Package Type: SOIC
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4.5V
• Operating Temp Range: -40C to 85C
• Pin Count: 32
• Mounting: Surface Mount
• Supply Current: 70mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AutoStore or Power Up RECALL
Switching Waveforms
Notes
Document Number: 001-06968 Rev. *H
t
t
t
V
V
t
t
15. t
16. CE and OE low and WE high for output behavior.
17. HSB is asserted low for 1us when V
HRECALL
STORE
DELAY
VCCRISE
VSBL
SWITCH
RESET
takes place.
HRECALL
Parameter
[13]
[16]
[16]
[15]
starts from the time V
WE
t
t
t
RESTORE
HLHZ
HLQZ ,
t
CC
BLQZ
Alt
rises above V
CAP
drops through V
Power up RECALL Duration
STORE Cycle Duration
Time Allowed to Complete SRAM Cycle
Low Voltage Trigger Level
Low Voltage Reset Level
V
Low Voltage Trigger (V
SWITCH
CC
Figure 11. AutoStore/Power Up RECALL
Rise Time
.
SWITCH
. If an SRAM WRITE has not taken place since the last nonvolatile cycle, HSB is released and no store
Description
SWITCH
) to HSB low
Min
150
4.0
1
CY14E256L
Max
550
300
4.5
3.6
10
CY14E256L
Page 12 of 19
Unit
ms
μs
μs
μs
ns
V
V
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