CY14B256LA-ZS25XI Cypress Semiconductor Corp, CY14B256LA-ZS25XI Datasheet - Page 7

• Manufacturer Part Number: CY14B256LA-ZS25XI
• Description: CY14B256LA-ZS25XI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14B256LA-ZS25XI

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256K (32K x 8)
• Speed: 25ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 2. Mode Selection (continued)
Preventing AutoStore
The AutoStore function is disabled by initiating an AutoStore
disable sequence. A sequence of read operations is performed
in a manner similar to the Software STORE initiation. To initiate
the AutoStore disable sequence, the following sequence of CE
or OE controlled read operations must be performed:
The AutoStore is reenabled by initiating an AutoStore enable
sequence. A sequence of read operations is performed in a
manner similar to the Software RECALL initiation. To initiate the
AutoStore enable sequence, the following sequence of CE or OE
controlled read operations must be performed:
Document Number: 001-54707 Rev. *F
1. Read address 0x0E38 valid READ
2. Read address 0x31C7 valid READ
3. Read address 0x03E0 valid READ
4. Read address 0x3C1F valid READ
5. Read address 0x303F valid READ
6. Read address 0x0B45 AutoStore disable
1. Read address 0x0E38 valid READ
2. Read address 0x31C7 valid READ
3. Read address 0x03E0 valid READ
4. Read address 0x3C1F valid READ
5. Read address 0x303F valid READ
6. Read address 0x0B46 AutoStore enable
CE
L
L
L
WE
H
H
H
OE
L
L
L
A
0x3C1F
0x3C1F
0x0FC0
0x3C1F
0x0E38
0x31C7
0x03E0
0x303F
0x0B46
0x0E38
0x31C7
0x03E0
0x303F
0x0E38
0x31C7
0x03E0
0x303F
0x0C63
14
- A
If the AutoStore function is disabled or reenabled, a manual
STORE operation (Hardware or Software) must be issued to
save the AutoStore state through subsequent power-down
cycles. The part comes from the factory with AutoStore enabled.
Data Protection
The CY14B256LA protects data from corruption during low
voltage conditions by inhibiting all externally initiated STORE
and write operations. The low voltage condition is detected when
V
(both CE and WE are LOW) at power-up, after a RECALL or
STORE, the write is inhibited until the SRAM is enabled after
t
writes during power-up or brown out conditions.
Noise Considerations
Refer to CY application note AN1064.
LZHSB
0
CC
[6]
is less than V
(HSB to output active). This protects against inadvertent
AutoStore Enable
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile
Nonvolatile
STORE
Recall
Mode
SWITCH
. If the CY14B256LA is in a write mode
Output high-Z
Output high-Z
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
I/O
CY14B256LA
Active I
Active
Active
Page 7 of 22
Power
CC2
[7]
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