CY14B101LA-BA45XIT Cypress Semiconductor Corp, CY14B101LA-BA45XIT Datasheet - Page 10
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CY14B101LA-BA45XIT
Manufacturer Part Number
CY14B101LA-BA45XIT
Description
CY14B101LA-BA45XIT
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY14B101LA-SP45XI.pdf
(26 pages)
Specifications of CY14B101LA-BA45XIT
Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
1M (128K x 8)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY14B101LA-BA45XIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Data Retention and Endurance
Capacitance
Thermal Resistance
AC Test Conditions
Input pulse levels....................................................0 V to 3 V
Input rise and fall times (10% - 90%)............................ <3 ns
Input and output timing reference levels........................ 1.5 V
Note
Document #: 001-42879 Rev. *K
DATA
NV
C
C
Parameter
15. These parameters are guaranteed by design and are not tested.
Parameter
IN
OUT
C
Parameter
Θ
Θ
R
OUTPUT
JC
JA
[15]
[15]
3.0 V
Thermal resistance
(Junction to ambient)
Thermal resistance
(Junction to case)
Input capacitance (except BHE, BLE and HSB) T
Input capacitance (for BHE, BLE and HSB)
Output capacitance (except HSB)
Output capacitance (for HSB)
Data retention
Nonvolatile STORE operations
Description
30 pF
Description
577 Ω
Test conditions follow
standard test methods and
procedures for measuring
thermal impedance, in
accordance with
EIA/JESD51.
R1
Test Conditions
Description
789 Ω
Figure 5. AC Test Loads
R2
OUTPUT
V
54-TSOP II 48-SSOP 48-FBGA 44-TSOP II 32-SOIC Unit
A
CC
= 25 °C, f = 1 MHz,
10.13
36.4
= V
3.0 V
CC
(Typ)
Test Conditions
5 pF
37.47
24.71
38.58
11.71
577 Ω
R1
1,000
Min
20
41.74
11.90
CY14B101NA
CY14B101LA
for tristate specs
Max
789 Ω
7
8
7
8
R2
41.55
24.43
Page 10 of 26
Years
Unit
K
Unit
pF
pF
pF
pF
°C/W
°C/W
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