CY14B101LA-BA45XI Cypress Semiconductor Corp, CY14B101LA-BA45XI Datasheet - Page 17

• Manufacturer Part Number: CY14B101LA-BA45XI
• Description: CY14B101LA-BA45XI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14B101LA-BA45XI

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 1M (128K x 8)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Truth Table For SRAM Operations
HSB must remain HIGH for SRAM operations
Notes
Document #: 001-42879 Rev. *K
Table 3. Truth Table for x8 Configuration
Table 4. Truth Table for x16 Configuration
43. Data DQ
44. BHE and BLE are applicable for x16 configuration only.
CE
CE
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
0
- DQ
WE
WE
7
H
H
X
X
H
H
H
H
H
H
X
L
L
L
L
for x8 configuration and Data DQ
OE
OE
X
X
H
H
H
X
X
X
L
L
L
H
X
X
L
BHE
High Z
Data Out (DQ
High Z
Data in (DQ
H
H
H
H
X
L
L
L
L
L
L
[44]
BLE
0
- DQ
H
H
H
H
0
X
L
L
L
L
L
L
Inputs/Outputs
–DQ
[44]
0
15
–DQ
for x16 configuration.
7
High Z
High Z
Data Out (DQ
Data Out (DQ
DQ
Data Out (DQ
DQ
High Z
High Z
High Z
Data In (DQ
Data In (DQ
DQ
Data In (DQ
DQ
);
7
);
8
0
8
0
Inputs/Outputs
–DQ
–DQ
–DQ
–DQ
15
7
15
7
in High Z
in High Z
[43]
in High Z
in High Z
0
0
8
–DQ
–DQ
–DQ
0
0
8
–DQ
–DQ
–DQ
15
7
15
);
15
7
15
[43]
)
);
);
)
);
Deselect/Power-down
Read
Output disabled
Write
Deselect/Power-down
Output disabled
Read
Read
Read
Output disabled
Output disabled
Output disabled
Write
Write
Write
Mode
Mode
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Standby
Active
Active
Active
CY14B101NA
CY14B101LA
Power
Power
Page 17 of 26
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