AM29LV800DT-90ED Spansion Inc., AM29LV800DT-90ED Datasheet - Page 41

• Manufacturer Part Number: AM29LV800DT-90ED
• Description: Flash Memory IC
• Manufacturer: Spansion Inc.
• Series: AM29r

Specifications of AM29LV800DT-90ED

• Memory Size: 8Mbit
• Package/case: 48-TSOP
• Supply Voltage Max: 3V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Access Time, Tacc: 90nS
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 5
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
Am29LV800D_00_A6 May 5, 2006
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
for further information on command definitions.
Parameter
Current
Symbol
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
CC
. Test conditions: V
Parameter
Description
Word Mode
Byte Mode
Control Pin Capacitance
Parameter Description
SS
SS
Output Capacitance
Input Capacitance
on all pins except I/O pins
on all I/O pins
CC
Typ (Note 1)
= 2.7 V, 1,000,000 cycles.
CC
8.4
5.8
14
16
= 3.0 V, one pin at a time.
1
8
D A T A
Am29LV800D
Max (Note 2)
S H E E T
300
360
10
25
17
Test Conditions
°
C, 3.0 V V
150°C
125°C
Test Setup
V
V
V
OUT
IN
IN
–100 mA
–1.0 V
–1.0 V
= 0
= 0
Min
= 0
CC
Unit
µs
µs
s
s
s
s
, 1,000,000 cycles. Additionally,
Excludes 00h programming
prior to erasure
Excludes system level overhead
(Note 5)
Min
10
20
Typ
8.5
7.5
6
Comments
V
+100 mA
CC
12.5 V
Max
Max
+ 1.0 V
7.5
12
9
Years
Years
Unit
Unit
pF
pF
pF
39