AM29LV800BB-70EC AMD (ADVANCED MICRO DEVICES), AM29LV800BB-70EC Datasheet - Page 22

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AM29LV800BB-70EC

Manufacturer Part Number
AM29LV800BB-70EC
Description
Flash Memory IC
Manufacturer
AMD (ADVANCED MICRO DEVICES)
Datasheet

Specifications of AM29LV800BB-70EC

Memory Configuration
1M X 8 / 512k X 16 Bit
Memory Size
8Mbit
Package/case
48-TSOP
Supply Voltage Max
3.6V
Access Time, Tacc
70nS
Mounting Type
Surface Mount
Supply Voltage Min
2.7V

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to determine if a sector is actively erasing or is erase-
suspended. See “Write Operation Status” for informa-
tion on these status bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data
within non-suspended sectors. The system can deter-
mine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard
program operation. See “Write Operation Status” for
more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts
to the Erase Suspend mode, and is ready for another
v a l i d o p e r a t i o n . S e e “A u t o s e l e c t C o m m a n d
Sequence” for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase
suspend mode and continue the sector erase opera-
tion. Further writes of the Resume command are
ignored. Another Erase Suspend command can be
written after the device has resumed erasing.
20
Am29LV800B
Notes:
1. See Table 1 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
No
Command Sequence
Erasure Completed
Figure 4. Erase Operation
from System
Write Erase
Data = FFh?
Data Poll
START
Yes
Embedded
Erase
algorithm
in progress

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