AM29F400BB-70SD Spansion Inc., AM29F400BB-70SD Datasheet - Page 42

Flash Memory IC

AM29F400BB-70SD

Manufacturer Part Number
AM29F400BB-70SD
Description
Flash Memory IC
Manufacturer
Spansion Inc.
Datasheet

Specifications of AM29F400BB-70SD

Memory Size
4Mbit
Memory Configuration
512K X 8 / 256K X 16
Ic Interface Type
Parallel
Access Time
70ns
Memory Case Style
SOIC
No. Of Pins
44
Operating Temperature Range
0°C To +70°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29F400BB-70SD
Manufacturer:
AMD
Quantity:
3 520
Part Number:
AM29F400BB-70SD
Manufacturer:
AMD
Quantity:
20 000
General Description
Third paragraph: Added 45 ns to access times.
Product Selector Guide
Added the -45 speed option for V
the -55 speed option for V
Ordering Information
Added “Special Designation” to “Optional Processing”
heading; added “0” for 55 ns 10% VCC, deleted burn-in.
Burn-in is available by contacting an AMD representative.
Added -55 ± 10% and -45 speed options to the list of
valid combinations. Added extended temperature
ratings to -55 ±5% valid combinations.
Table 1, Device Bus Operations
Changed the BYTE#=V
temporary sector unprotect to “don’t care” (X).
Figure 6. Maximum Negative Undershoot
Waveform
Corrected figure title.
Table 7, Test Specifications
Test load capacitance: Removed 55 ns speed option
from and added -45 speed option to the 30 pF.
DC Characteristics
Removed V
V
AC Characteristics
Added the -45 speed option.
Revision C+4 (August 1998)
Ordering Information
Added extended temperature combinations to the -55,
±10% speed option.
Deleted the -60 speed option.
Revision D (January 1999)
Distinctive Characteristics
Added:
■ 20-year data retention at 125°C
DC Characteristics—TTL/NMOS Compatible
I
specifications are tested with V
40
CC1
CC
— Reliable operation for the life of the system
, I
max is only valid for max specs.
CC2
, I
CC
CC3
= V
: Added Note 2 “Maximum I
CC max
IL
test condition for I
CC
input for DQ8–DQ15 during
= 5.0 V ± 10%.
CC
CC
= V
= 5.0 V ± 5% and
CCmax
CC
CC1
”.
D A T A
– I
CC3
Am29F400B
.
S H E E T
DC Characteristics—CMOS Compatible
I
specifications are tested with V
Erase and Programming Performance
Deleted “(4.75 V for -45 and -55xx0)”
Revision D+1 (July 2, 1999)
Global
Added references to availability of device in Known
Good Die (KGD) form.
Revision E (November 15, 1999)
AC Characteristics—Figure 13. Program
Operations Timing and Figure 14. Chip/Sector
Erase Operations
Deleted t
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E+1 (November 30, 2000)
Added table of contents. Reinserted revision summa-
ries for revisions A and B.
Revision E+2 (June 4, 2004)
Ordering Information
Added Pb-Free OPNs
Revision E+3 (December 22, 2005)
Global
Deleted 150 ns speed option and reverse TSOP pack-
age from document.
Revision E4 (May 18, 2006)
Added “Not recommended for new designs” note.
AC Characteristics
Changed t
Revision E5 (November 1, 2006)
Deleted “Not recommended for new designs” note and
Retired Product designation.
CC1
, I
CC2
GHWL
, I
BUSY
CC3
: Added Note 2 “Maximum I
and changed OE# waveform to start at
specification to maximium value.
21505E5 November 1, 2006
CC
= V
from Note 2.
CCmax
CC
”.

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