ADG836LYRMZ-REEL7 Analog Devices Inc, ADG836LYRMZ-REEL7 Datasheet - Page 3

• Manufacturer Part Number: ADG836LYRMZ-REEL7
• Description: Low Voltage Dual SPDT Switch IC.
• Manufacturer: Analog Devices Inc

Specifications of ADG836LYRMZ-REEL7

• Function: Switch
• Circuit: 2 x SPDT
• On-state Resistance: 650 mOhm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 1.65 V ~ 3.6 V
• Current - Supply: 0.003µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPECIFICATIONS
Table 1. V
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
1
2
Temperature range for Y version is −40°C to +125°C.
Guaranteed by design, not subject to production test.
Analog Signal Range
On Resistance (R
On Resistance Match between
On Resistance Flatness (R
Source Off Leakage I
Channel On Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current, I
C
t
t
Break-before-Make Time Delay
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Total Harmonic Distortion
Insertion Loss
−3 dB Bandwidth
C
C
I
DD
ON
OFF
Channels (∆R
(t
(THD + N)
IN
S
D
, C
BBM
, Digital Input Capacitance
(OFF)
S
)
(ON)
DD
= 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
ON
INL
)
ON
or I
)
S
INL
INH
INH
(OFF)
D
, I
S
FLAT (ON)
(ON)
2
)
+25°C
0.5
0.65
0.04
0.1
±0.2
±1
±0.2
±1
0.005
4
21
26
4
7
17
40
−67
−90
−67
0.02
−0.05
57
25
75
0.003
−40°C – +85°C
0.75
0.075
0.15
±10
±15
28
8
1
Rev. A | Page 3 of 16
−40°C – +125°C
0 V to V
0.8
0.08
0.16
±100
±120
2
0.8
±0.1
29
9
5
4
1
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
%
dB typ
MHz typ
pF typ
pF typ
µA typ
µA max
Test Conditions/Comments
V
V
V
V
V
V
V
V
R
V
R
V
R
V
V
R
S1A−S2A/S1B−S2B (Figure 27)
R
S1A−S1B/S2A−S2B (Figure 26)
R
R
R
R
V
Digital inputs = 0 V or 3.6 V
(Figure 18)
(Figure 19)
L
L
L
L
L
L
L
L
L
DD
DD
DD
DD
DD
S
S
IN
S
S
S1
S
DD
= 50 Ω, C
= 0.6 V/3.3 V, V
= V
= 50 Ω, C
= 1.5 V/0 V (Figure 21)
= 50 Ω, C
= 1.5 V (Figure 21)
= 50 Ω, C
= 1.5 V, R
= 50 Ω, C
= 50 Ω, C
= 32 Ω, f = 20 Hz to 20 kHz, V
= 50 Ω, C
= 50 Ω, C
= V
= V
= 2.7 V
= 2.7 V, V
= 2.7 V, V
= 2.7 V, V
= 3.6 V
= 3.6 V
D
INL
S2
= 0.6 V or 3.3 V (Figure 20)
= 1.5 V (Figure 22)
or V
L
L
L
L
L
L
L
L
S
= 5 pF, f = 100 kHz (Figure 24)
= 35 pF
= 35 pF
= 35 pF
= 5 pF, f = 100 kHz
= 5 pF, f = 100 kHz
= 5 pF (Figure 25)
= 5 pF (Figure 25)
S
S
S
INH
= 0 Ω, C
= 0 V to V
= 0.65 V, I
= 0 V to V
D
= 3.3 V/0.6 V
L
= 1 nF (Figure 23)
DD
DD
S
= 10 mA
ADG836L
, I
, I
S
S
= 10 mA
= 10 mA
S
= 2 V p-p