ADG633YRU Analog Devices Inc, ADG633YRU Datasheet - Page 3

• Manufacturer Part Number: ADG633YRU
• Description: IC,ANALOG SWITCH,TRIPLE,SPDT,CMOS,TSSOP,16PIN,PLASTIC
• Manufacturer: Analog Devices Inc
• Type: Analog Switchr

Specifications of ADG633YRU

• Rohs Compliant: NO
• Rohs Status: RoHS non-compliant
• Function: Switch
• Circuit: 3 x SPDT
• On-state Resistance: 75 Ohm
• Voltage Supply Source: Single, Dual Supply
• Voltage - Supply, Single/dual (±): 2 V ~ 12 V, ±2 V ~ 6 V
• Current - Supply: 0.01µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Multiplexer Configuration: Triple SPDT
• Number Of Inputs: 3
• Number Of Outputs: 6
• Number Of Channels: 3
• Analog Switch On Resistance: 300@3.6VOhm
• Analog Switch Turn On Time: 310ns
• Analog Switch Turn Off Time: 40ns
• Package Type: TSSOP
• Power Supply Requirement: Single/Dual
• Single Supply Voltage (min): 2V
• Single Supply Voltage (typ): 3/5/9V
• Single Supply Voltage (max): 12V
• Dual Supply Voltage (min): ±2V
• Dual Supply Voltage (typ): ±3/±5V
• Dual Supply Voltage (max): ±6V
• Power Dissipation: 0.00001W
• Supply Current: 0.001mA
• Mounting: Surface Mount
• Pin Count: 16
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Package: 16TSSOP
• Maximum On Resistance: 300@3.6V Ohm
• Maximum Propagation Delay Bus To Bus: 90@±5V|150@5V|300@2.7V ns
• Maximum High Level Output Current: 20 mA
• Maximum Turn-off Time: 40@±5V ns
• Maximum Turn-on Time: 310@3.6V ns
• Switch Architecture: SPDT
• Power Supply Type: Single|Dual
• Lead Free Status / Rohs Status: Not Compliant

SPECIFICATIONS
DUAL-SUPPLY OPERATION
V
Table 1.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
1
Guaranteed by design; not subject to production test.
DD
Analog Signal Range
On Resistance, R
On-Resistance Match
On-Resistance Flatness, R
Source Off Leakage, I
Drain Off Leakage, I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current, I
Digital Input Capacitance, C
t
t
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Total Harmonic Distortion, THD + N
Channel-to-Channel Crosstalk
−3 dB Bandwidth
C
C
C
I
I
DD
SS
TRANSITION
ON
OFF
S(OFF)
D(OFF)
D(ON)
= +5 V, V
Between Channels, ΔR
( EN )
( EN )
, C
S(ON)
SS
INL
= −5 V, GND = 0 V, T
ON
or I
D(OFF)
INL
S(OFF)
INH
INH
D(ON)
ON
FLAT(ON)
, I
1
S(ON)
IN
BBM
+25°C
52
75
0.8
1.3
9
12
±0.005
±0.2
±0.005
±0.2
±0.005
±0.2
0.005
2
60
90
70
95
25
40
40
2
4
−90
0.025
−90
580
4
7
12
0.01
0.01
A
= −40°C to +125°C, unless otherwise noted.
B Version
−40°C to +85°C
90
1.8
13
110
120
45
Rev. A | Page 3 of 16
Y Version
−40°C to +125°C
V
100
2
14
±5
±5
±5
2.4
0.8
±1
130
135
50
10
1
1
SS
to V
DD
V
Ω typ
Ω typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA max
pF typ
ns typ
ns typ
ns typ
ns typ
ns min
pC typ
pC max
dB typ
% typ
dB typ
pF typ
pF typ
pF typ
μA typ
μA max
μA typ
μA max
Unit
Ω max
Ω typ
Ω max
Ω max
nA typ
μA typ
ns max
ns max
ns max
MHz typ
Test Conditions/Comments
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
R
R
R
R
R
R
R
R
V
V
R
R
R
R
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
Digital inputs = 0 V or 5.5 V
Digital inputs = 0 V or 5.5 V
Digital inputs = 0 V or 5.5 V
Digital inputs = 0 V or 5.5 V
DD
S
S
S
S
DD
DD
DD
D
D
D
D
D
D
IN
IN
L
L
L
L
L
L
L
L
S
S
L
L
L
L
DD
= 300 Ω, C
= 300 Ω, C
= ±4.5 V, I
= ±4.5 V, I
= +3.5 V, I
= +3.5 V, I
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 0 V, R
= 0 V, R
= 50 Ω, C
= 600 Ω, 2 V p-p, f = 20 Hz to 20 kHz
= 50 Ω, C
= 50 Ω, C
= V
= V
= ±4.5 V, V
= ±4.5 V, V
= ±4.5 V, V
= ±4.5 V, V
= V
= V
= +4.5 V, V
= +5 V, V
= +5 V, V
= +5.5 V, V
= +5.5 V, V
S
S
INL
INL
= ±4.5 V; see Figure 23
= ±4.5 V; see Figure 23
or V
or V
S
S
= 0 Ω, C
= 0 Ω, C
L
L
L
L
L
S
S
S
S
SS
SS
L
L
L
L
L
L
= 5 pF, f = 1 MHz; see Figure 28
= 5 pF, f = 1 MHz; see Figure 30
= 5 pF; see Figure 29
INH
INH
= 35 pF, V
= 35 pF, V
S
S
S
S
= 1 mA; see Figure 20
= 1 mA; see Figure 20
= 1 mA
= 1 mA
= 35 pF, V
= 35 pF, V
= 35 pF, V
= 35 pF, V
= 35 pF, V
= 35 pF, V
SS
SS
SS
= −5 V, V
= −5 V, V
= + 4.5 V; see Figure 21
= + 4.5 V; see Figure 21
= + 4.5 V; see Figure 22
= + 4.5 V; see Figure 22
= −5.5 V
= −4.5 V
= −5.5 V
L
L
= 1 nF; see Figure 27
= 1 nF; see Figure 27
S1
S1
S
S
S
S
S
S
S
S
= V
= V
= ±3 V, I
= ±3 V, I
= 3 V; see Figure 24
= 3 V; see Figure 24
= 3 V; see Figure 26
= 3 V; see Figure 26
= 3 V; see Figure 26
= 3 V; see Figure 26
S2
S2
= 3 V; see Figure 25
= 3 V; see Figure 25
S
S
ADG633
= 1 mA
= 1 mA