DF2S6.8CT(TPL3) Toshiba, DF2S6.8CT(TPL3) Datasheet

DF2S6.8CT(TPL3)

Manufacturer Part Number

DF2S6.8CT(TPL3)

Description

DIODE ZENER 150MW 6.8V 1-1P1A

Manufacturer

Toshiba

Datasheet

1.DF2S6.8CTTPL3.pdf (3 pages)

Specifications of DF2S6.8CT(TPL3)

Voltage - Zener (nom) (vz)

6.8V

Current - Reverse Leakage @ Vr

500nA @ 5V

Power - Max

150mW

Impedance (max) (zzt)

30 Ohm

Mounting Type

Surface Mount

Package / Case

0402 (1006 Metric), CST2

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Tolerance

Voltage - Forward (vf) (max) @ If

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Product for Use Only as Protection against Electrostatic

Discharge (ESD).

Absolute Maximum Ratings

Electrical Characteristics

Guaranteed Level of Esd Immunity

Marking

*This product is for protection against electrostatic discharge (ESD) only

*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,

Criterion: No damage to device elements

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

2 terminal ultra small package suitable for mounting on small space.

Note: Using continuously under heavy loads (e.g. the application of high

Zener voltage

Dynamic impedance

Reverse current

Terminal capacitance

Power dissipation

Junction temperature

Storage temperature range

pad dimension of 4 mm × 4 mm.

(Contact discharge)

Test Condition

IEC61000-4-2

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Equivalent Circuit

ESD Immunity Level

TOSHIBA Diodes for Protecting against ESD

(Ta = 25°C)

±30 kV

(Ta = 25°C)

Symbol

DF2S6.8CT

Symbol

stg

(top view)

= 5 mA

−55 to 150

= 5 V

= 0 V, f = 1 MHz

Rating

150*

150

Test Condition

Unit

°C

JEDEC

JEITA

TOSHIBA

Weight: 0.7 mg (typ.)

Min

6.4

CST2

―

Typ.

6.8

―

Max

7.2

0.5

―

DF2S6.8CT

1-1P1A

2009-01-19

―

Unit

μA

Ω

Unit in mm

Related parts for DF2S6.8CT(TPL3)

DF2S6.8CT(TPL3) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

100 Ta=25° 0.1 0 0.01 0.001 ZENER VOLTAGE Vz (V) 100 DF2S6.8CT f=1MHz ...

Page 3

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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