DF2S6.8CT TOSHIBA Semiconductor CORPORATION, DF2S6.8CT Datasheet
DF2S6.8CT
Manufacturer Part Number
DF2S6.8CT
Description
Toshiba Diodes For Protecting Against Esd
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.DF2S6.8CT.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2S6.8CT
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Absolute Maximum Ratings
Electrical Characteristics
Guaranteed Level of Esd Immunity
Marking
*This product is for protection against electrostatic discharge (ESD) only
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
Criterion: No damage to device elements
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
2 terminal ultra small package suitable for mounting on small space.
Note: Using continuously under heavy loads (e.g. the application of high
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
Power dissipation
Junction temperature
Storage temperature range
pad dimension of 4 mm × 4 mm.
(Contact discharge)
Test Condition
IEC61000-4-2
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
Characteristics
YE
Equivalent Circuit
ESD Immunity Level
TOSHIBA Diodes for Protecting against ESD
(Ta = 25°C)
±30 kV
(Ta = 25°C)
Symbol
DF2S6.8CT
Symbol
T
V
Z
C
I
T
P
stg
R
Z
Z
T
j
I
I
V
V
Z
Z
(top view)
R
R
= 5 mA
= 5 mA
−55 to 150
= 5 V
= 0 V, f = 1 MHz
Rating
150*
150
1
Test Condition
Unit
mW
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.7 mg (typ.)
Min
6.4
CST2
―
―
―
Typ.
6.8
25
―
―
Max
7.2
0.5
30
―
DF2S6.8CT
1-1P1A
2009-01-19
―
―
Unit
μA
pF
V
Ω
Unit in mm
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DF2S6.8CT Summary of contents
Page 1
... Symbol Test Condition MHz ±30 kV (top view) 1 DF2S6.8CT Unit mW °C °C CST2 ― JEDEC JEITA ― 1-1P1A TOSHIBA Weight: 0.7 mg (typ.) Min Typ. Max 6.4 6.8 7.2 ― ― 30 ― ― 0.5 ― ...
Page 2
... 100 Ta=25° 0.1 0 0.01 0.001 ZENER VOLTAGE Vz (V) 100 DF2S6.8CT f=1MHz Ta=25° REVERSE VOLTAGE V (V) R 2009-01-19 7 ...
Page 3
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 3 DF2S6.8CT 2009-01-19 ...