25LC512-I/MF Microchip Technology, 25LC512-I/MF Datasheet - Page 8

• Manufacturer Part Number: 25LC512-I/MF
• Description: 512k, 64K X 8 , 2.5V SER EE IND 8 DFN-S 6X5MM TUBE
• Manufacturer: Microchip Technology

Specifications of 25LC512-I/MF

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 512K (64K x 8)
• Speed: 20MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-DFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

25LC512
2.2
Prior to any attempt to write data to the 25LC512, the
write enable latch must be set by issuing the WREN
instruction (Figure 2-4). This is done by setting CS low
and then clocking out the proper instruction into the
25LC512. After all eight bits of the instruction are trans-
mitted, the CS must be brought high to set the write
enable latch. If the write operation is initiated immedi-
ately after the WREN instruction without CS being
brought high, the data will not be written to the array
because the write enable latch will not have been
properly set.
A write sequence includes an automatic, self timed
erase cycle. It is not required to erase any portion of the
memory prior to issuing a WRITE instruction.
Once the write enable latch is set, the user may
proceed by setting the CS low, issuing a WRITE instruc-
tion, followed by the 16-bit address, and then the data
to be written. Up to 128 bytes of data can be sent to the
device before a write cycle is necessary. The only
restriction is that all of the bytes must reside in the
same page.
FIGURE 2-2:
DS22065C-page 8
SCK
Note:
CS
SO
SI
Write Sequence
0
0
When doing a write of less than 128 bytes
the data in the rest of the page is refreshed
along with the data bytes being written.
This will force the entire page to endure a
write cycle, for this reason endurance is
specified per page.
0
1
0
Instruction
2
0
3
BYTE WRITE SEQUENCE
0
4
0
5
High-Impedance
1
6
0
7
15 14 13 12
8
9 10 11
16-bit Address
For the data to be actually written to the array, the CS
must be brought high after the Least Significant bit (D0)
of the n
brought high at any other time, the write operation will
not be completed. Refer to Figure 2-2 and Figure 2-3
for more detailed illustrations on the byte write
sequence and the page write sequence, respectively.
While the write is in progress, the STATUS register may
be read to check the status of the WPEN, WIP, WEL,
BP1 and BP0 bits (Figure 2-6). A read attempt of a
memory array location will not be possible during a
write cycle. When the write cycle is completed, the
write enable latch is reset.
21 22 23 24 25 26 27 28 29 30 31
2
Note:
1
th
0 7
data byte has been clocked in. If CS is
Page write operations are limited to writing
bytes within a single physical page,
regardless of the number of bytes
actually being written. Physical page
boundaries start at addresses that are
integer multiples of the page buffer size (or
‘page size’), and end at addresses that are
integer multiples of page size – 1. If a
Page Write command attempts to write
across a physical page boundary, the
result is that the data wraps around to the
beginning of the current page (overwriting
data previously stored there), instead of
being written to the next page as might be
expected. It is therefore necessary for the
application software to prevent page write
operations that would attempt to cross a
page boundary.
6
5
Data Byte
 2010 Microchip Technology Inc.
4
3
2
1
0
Twc