PDZ12B,115 NXP Semiconductors, PDZ12B,115 Datasheet - Page 6

DIODE ZENER 12V 400MW SOD323

PDZ12B,115

Manufacturer Part Number
PDZ12B,115
Description
DIODE ZENER 12V 400MW SOD323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDZ12B,115

Package / Case
SC-76, SOD-323, UMD2
Mounting Type
Surface Mount
Power - Max
400mW
Tolerance
±2%
Current - Reverse Leakage @ Vr
100nA @ 9V
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Voltage - Zener (nom) (vz)
12V
Impedance (max) (zzt)
10 Ohm
Zener Voltage
11.99 V
Voltage Tolerance
2 %
Voltage Temperature Coefficient
8.4 mV / K
Power Dissipation
400 mW
Maximum Reverse Leakage Current
0.1 uA
Maximum Zener Impedance
10 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Dc
08+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934054861115::PDZ12B T/R::PDZ12B T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PDZ12B,115
Manufacturer:
NXP Semiconductors
Quantity:
14 400
Part Number:
PDZ12B,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
GRAPHICAL DATA
2004 Mar 22
handbook, halfpage
handbook, halfpage
Voltage regulator diodes
(mV/K)
PDZ2.4B to PDZ4.3B.
T
Fig.4
(mW)
j
P tot
S Z
= 25 °C to 150 °C.
500
400
300
200
100
−1
−2
−3
0
0
0
0
Temperature coefficient as a function of
working current; typical values.
Fig.2 Power derating curve.
50
20
100
4.3
40
150
3.9
2.4
2.7
3.3
I Z (mA)
T amb (°C)
3.6
MGL273
MBK245
3.0
200
60
6
handbook, halfpage
handbook, halfpage
(mV/K)
T
Fig.3
PDZ4.7B to PDZ12B.
T
Fig.5
j
j
S Z
(mA)
= 25 °C.
= 25 °C to 150 °C.
I F
300
200
100
10
−5
0
5
0
0.6
0
Forward current as a function of forward
voltage; typical values.
Temperature coefficient as a function of
working current; typical values.
4
8
0.8
9.1
8.2
7.5
6.8
12
11
10
12
PDZ-B series
6.2
5.6
5.1
4.7
V F (V)
Product data sheet
16
I Z (mA)
MBG781
MGL274
20
1

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