FZ1200R33KF2 Infineon Technologies

FZ1200R33KF2

Manufacturer Part Number

FZ1200R33KF2

Description

IGBT Modules U 641-FZ1200R33KF2C

Manufacturer

Infineon Technologies

Specifications of FZ1200R33KF2

Configuration

Triple Common Emitter Common Gate

Collector- Emitter Voltage Vceo Max

3300 V

Collector-emitter Saturation Voltage

3.4 V

Continuous Collector Current At 25 C

2000 A

Gate-emitter Leakage Current

400 nA

Power Dissipation

14.7 KW

Maximum Operating Temperature

+ 125 C

Maximum Gate Emitter Voltage

+/- 20 V

Minimum Operating Temperature

- 40 C

Mounting Style

Screw

Package / Case

IHM130

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FZ1200R33KF2

Manufacturer:

EUPEC

Quantity:

134

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

FZ1200R33KF2

Quantity:

Company:

Meier Automation Equipment Co., Limited

Part Number:

FZ1200R33KF2C

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FZ1200R33KF2_B3_S2

Manufacturer:

Quantity:

201

Related parts for FZ1200R33KF2

Related keywords

FZ1200R33KF2 component
FZ1200R33KF2 part
FZ1200R33KF2 distributor
FZ1200R33KF2 RoHS