BSM150GB170DL Infineon Technologies, BSM150GB170DL Datasheet - Page 4

• Manufacturer Part Number: BSM150GB170DL
• Description: IGBT Modules N-CH 1.7KV 300A
• Manufacturer: Infineon Technologies

Specifications of BSM150GB170DL

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 300 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Collector Current (dc) (max): 300A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / Rohs Status: Compliant

I
[A]
C
350
300
250
200
150
100
50
0
0
BSM 150 GB 170 DL / 7
Bild / Fig. 7
Sicherer Arbeitsbereich (RBSOA) /
Reverse bias safe operation area (RBSOA)
R
g
= 10 , T
200
IC,Modul
IC,Chip
vj
= 125°C
400
600
800
1000
1200
1400
V
CE
[V]
1600
1800
BSM 150 GB 170 DL