FS225R12KE3 Infineon Technologies, FS225R12KE3 Datasheet - Page 3

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FS225R12KE3

Manufacturer Part Number
FS225R12KE3
Description
IGBT Modules 1200V 225A 3-PHASE
Manufacturer
Infineon Technologies
Datasheet

Specifications of FS225R12KE3

Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
1.7 V
Continuous Collector Current At 25 C
325 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
1.15 KW
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPACK+
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Ic (max)
225.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3
Housing
EconoPACK™ +
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FS225R12KE3
Manufacturer:
SEMIKRON
Quantity:
120
Part Number:
FS225R12KE3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FS225R12KE3
Quantity:
55
Part Number:
FS225R12KE3-S1
Manufacturer:
INFINEON
Quantity:
100
Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
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