FZ200R65KF1 Infineon Technologies, FZ200R65KF1 Datasheet - Page 5

• Manufacturer Part Number: FZ200R65KF1
• Description: IGBT Modules N-CH 6.3KV 400A
• Manufacturer: Infineon Technologies

Specifications of FZ200R65KF1

• Configuration: Single Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 6300 V
• Continuous Collector Current At 25 C: 400 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHV73

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
450
400
350
300
250
200
150
100
450
400
350
300
250
200
150
100
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
50
50
0
0
0,0
5
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
6
1,0
7
2,0
FZ 200 R 65 KF1
8
25°C
125°C
25°C
125°C
9
3,0
V
V
5
GE
F
10
[V]
[V]
4,0
11
I
C
V
CE
= f (V
= 10V
I
F
12
5,0
= f (V
GE
)
F
)
13
6,0
14
7,0
15
FZ 200 R65 KF1 (final 1).xls