FD400R33KF2C-K Infineon Technologies, FD400R33KF2C-K Datasheet - Page 2
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FD400R33KF2C-K
Manufacturer Part Number
FD400R33KF2C-K
Description
IGBT Modules N-CH 3.3KV 660A
Manufacturer
Infineon Technologies
Specifications of FD400R33KF2C-K
Configuration
Single Dual Collector Dual Emitter
Collector- Emitter Voltage Vceo Max
3300 V
Continuous Collector Current At 25 C
660 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHV130
Ic (max)
400.0 A
Vce(sat) (typ)
3.4 V
Technology
IGBT2 Standard
Housing
IHV 130 mm
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FD400R33KF2C-K
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
:
1
1
:
?
4g
%
P
1
M
%
9
4
b
@
F
;
;
@
BG
;V
BG
%
@
%
;
@
;
;
@
2 `
2
@
:
FD400R33KF2C-K
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4f )
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1
1
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92
92
92
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,
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9EL
9EL
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,==>
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4f=>
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4=>
,f
KT
4g
4f
Vorläufige Daten
preliminary data
"
00
00
**2*
3 2
!
!
**
8*
*3*
2!
2!
0*
2
*
"
02*
02*
*32
F"
#EB
#EB
9g
L
L
B
L
,
9
9
,
,
9
9