BYM300A120DN2 Infineon Technologies, BYM300A120DN2 Datasheet - Page 3

• Manufacturer Part Number: BYM300A120DN2
• Description: IGBT Modules 1200V 300A F/DIODE
• Manufacturer: Infineon Technologies

Specifications of BYM300A120DN2

• Configuration: Single
• Power Dissipation: 1 KW
• Mounting Style: Screw
• Package / Case: 62 mm
• If (max): 300.0 A
• Vf (max): 2.3 V
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BYM 300 A 120 DN2
Power dissipation
P
parameter: T
P
Forward characteristics of fast recovery
reverse diode
parameter: T
I
tot
F
tot
= ƒ (T
1100
900
800
700
600
500
400
300
200
100
600
500
450
400
350
300
250
200
150
100
50
W
A
0
0
0.0
0
C
)
20
j
j
0.5
≤ 150 °C
I
F
40
= f(V
1.0
60
F
T
)
j
=125°C
80
1.5
100
2.0
120
T
j
=25°C
V
T
°C
V
C
F
160
3.0
3
Transient thermal impedance
Z
parameter: D = t
Z
thJC
th JC
K/W
10
10
10
10
10
= ƒ (t
-1
-2
-3
-4
0
10
-5
p
)
single pulse
10
p
-4
/ T
10
-3
10
-2
Diode
D = 0.50
Oct-27-1997
10
t
-1
p
0.20
0.10
0.05
0.02
0.01
s
10
0