FD1200R17KE3-K_B2 Infineon Technologies, FD1200R17KE3-K_B2 Datasheet - Page 2

• Manufacturer Part Number: FD1200R17KE3-K_B2
• Description: IGBT Modules N-CH 1.7KV 1.7KA
• Manufacturer: Infineon Technologies

Specifications of FD1200R17KE3-K_B2

• Configuration: Single Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 1700 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / Rohs Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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preliminary data
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