FD1200R17KE3-K_B2 Infineon Technologies, FD1200R17KE3-K_B2 Datasheet - Page 2
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FD1200R17KE3-K_B2
Manufacturer Part Number
FD1200R17KE3-K_B2
Description
IGBT Modules N-CH 1.7KV 1.7KA
Manufacturer
Infineon Technologies
Datasheet
1.FD1200R17KE3-K_B2.pdf
(8 pages)
Specifications of FD1200R17KE3-K_B2
Configuration
Single Dual Collector Dual Emitter
Collector- Emitter Voltage Vceo Max
1700 V
Continuous Collector Current At 25 C
1700 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHM130
Channel Type
N
Collector-emitter Voltage
1.7kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Ic (max)
1,200.0 A
Vce(sat) (typ)
2.0 V
Technology
IGBT3
Housing
IHM 130 mm
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FD1200R17KE3-K_B2FD1200R17KE3-K-B2
Manufacturer:
BITEK
Quantity:
34 000
Company:
Part Number:
FD1200R17KE3-K_B2
Manufacturer:
WIMA
Quantity:
1 001
Part Number:
FD1200R17KE3-K_B2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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preliminary data
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