FP75R12KT3 Infineon Technologies, FP75R12KT3 Datasheet - Page 2
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FP75R12KT3
Manufacturer Part Number
FP75R12KT3
Description
IGBT Modules N-CH 1.2KV 105A
Manufacturer
Infineon Technologies
Datasheet
1.FP75R12KT3.pdf
(11 pages)
Specifications of FP75R12KT3
Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
105 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
Econo 3
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Packages
AG-ECONO3-1
Ic (max)
75.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3 Fast
Housing
EconoPIM 3
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FP75R12KT3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FP75R12KT3
Quantity:
107
Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
Diode-Gleichrichter / diode-rectifier
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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