BSM35GD120DN2 Infineon Technologies, BSM35GD120DN2 Datasheet - Page 9

• Manufacturer Part Number: BSM35GD120DN2
• Description: IGBT Modules 1200V 35A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM35GD120DN2

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.7 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 150 nA
• Power Dissipation: 280 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 35 GD 120 DN2
Gehäusemaße / Schaltbild
Package outline / Circuit diagramm
9
2006-01-31