FS75R17KE3 Infineon Technologies, FS75R17KE3 Datasheet - Page 2

• Manufacturer Part Number: FS75R17KE3
• Description: IGBT Modules N-CH 1.7KV 130A
• Manufacturer: Infineon Technologies

Specifications of FS75R17KE3

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 130 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: Econo 3
• Ic (max): 75.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: EconoPACK™ 3

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
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FS75R17KE3
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-; -C/ ) 1* -; &'( ) 1 *+,
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-; -C/ ) 1* -; &'( ) *+,
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) 1
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; &'( ) 1 *+,
8EM
8EM
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Vorläufige Daten
preliminary data
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